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Micro-light-emitting-diode array with dual functions of visible light communication and illumination

机译:具有可见光通信和照明双重功能的微发光二极管阵列

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摘要

We demonstrate high-speed blue 4 × 4 micro-light-emitting-diode (LED) arrays with 14 light-emitting units (two light-emitting units are used as the positive and negative electrodes for power supply,respectively) comprising multiple quantum wells formed of GaN epitaxial layers grown on a sapphire substrate,and experimentally test their applicability for being used as VLC transmitters and illuminations.The micro-LED arrays provide a maximum-3-dB frequency response of 60.5 MHz with a smooth frequency curve from 1 MHz to 500 MHz for an optical output power of 165 mW at an injection current of 30 mA,which,to our knowledge,is the highest response frequency ever reported for blue GaN-based LEDs operating at that level of optical output power.The relationship between the frequency and size of the device single pixel diameter reveals the relationship between the response frequency and diffusion capacitance of the device.
机译:我们演示了具有多个量子阱的14个发光单元(分别使用两个发光单元作为电源的正负电极)的高速蓝色4×4微发光二极管(LED)阵列由在蓝宝石衬底上生长的GaN外延层组成,并通过实验测试了其用作VLC发射器和照明的适用性.micro-LED阵列提供了60.5 MHz的最大3-dB频率响应以及从1 MHz开始的平滑频率曲线注入电流为30 mA时,光输出功率为165 mW时,最高响应频率为500 MHz,据我们所知,这是有报道的蓝光GaN基LED在该光输出功率水平下运行时的最高响应频率。器件单个像素直径的频率和大小揭示了响应频率与器件扩散电容之间的关系。

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  • 来源
    《中国物理:英文版》 |2017年第10期|490-495|共6页
  • 作者单位

    Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, Guangzhou 510631, China;

    Institute of the Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China;

    Guangdong Engineering Technology Research Center of Optoelectronic Functional Materials and Devices, Guangzhou 510631, China;

    Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, Guangzhou 510631, China;

    Institute of the Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China;

    Guangdong Engineering Technology Research Center of Optoelectronic Functional Materials and Devices, Guangzhou 510631, China;

    Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, Guangzhou 510631, China;

    Institute of the Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China;

    Guangdong Engineering Technology Research Center of Optoelectronic Functional Materials and Devices, Guangzhou 510631, China;

    Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, Guangzhou 510631, China;

    Institute of the Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China;

    Guangdong Engineering Technology Research Center of Optoelectronic Functional Materials and Devices, Guangzhou 510631, China;

  • 收录信息 中国科学引文数据库(CSCD);中国科技论文与引文数据库(CSTPCD);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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