Double-gate-all-around tunnel field-effect transistor

摘要

In this work,a double-gate-all-around tunneling field-effect transistor is proposed.The performance of the novel device is studied by numerical simulation.The results show that with a thinner body and an additional core gate,the novel device achieves a steeper subthreshold slope,less susceptibility to the short channel effect,higher on-state current,and larger on/off current ratio than the traditional gate-all-around tunneling field-effect transistor.The excellent performance makes the proposed structure more attractive to further dimension scaling.