Magnesium incorporation efficiencies in MgxZn1-xO films on ZnO substrates grown by metalorganic chemical vapor deposition

摘要

We investigate the magnesium (Mg) incorporation efficiencies in MgxZn1-xO films on c-plane Zn-face ZnO substrates by using metalorganic chemical vapor deposition (MOCVD) technique.In order to deposit high quality MgxZn1-xO films,atomically smooth epi-ready surfaces of the hydrothermal grown ZnO substrates are achieved by thermal annealing in 02 atmosphere and characterized by atomic force microscope (AFM).The AFM,scanning electron microscope (SEM),and x-ray diffraction (XRD) studies demonstrate that the MgxZn1-xO films each have flat surface and hexagonal wurtzite structure without phase segregation at up to Mg content of 34.4％.The effects of the growth parameters including substrate temperature,reactor pressure and Ⅵ/Ⅱ ratio on Mg content in the films are investigated by XRD analysis based on Vegard's law,and confirmed by photo-luminescence spectra and x-ray photoelectron spectroscopy as well.It is indicated that high substrate temperature,low reactor pressure,and high Ⅵ/Ⅱ ratio are good for obtaining high Mg content.