机译:InAs / AlSb HFET小信号模型中具有最小二乘近似的优化拟合函数,用于表征碰撞电离效应的频率依赖性
North western Polytechnical University, Xi'an 710072, China;
School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of China, Xi'an 710071, China;