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Magnetic interactions in a proposed diluted magnetic semiconductor (Ba1-xKx)(Zn1-yMny)2P2

机译:拟议的稀磁半导体(Ba1-xKx)(Zn1-yMny)2P2中的磁相互作用

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摘要

By using first-principles electronic structure calculations,we have studied the magnetic interactions in a proposed BaZn2P2-based diluted magnetic semiconductor (DMS).For a typical compound Ba(Zn0.944Mn0.056)2P2 with only spin doping,due to the superexchange interaction between Mn atoms and the lack of itinerant carriers,the short-range antiferromagnetic coupling dominates.Partially substituting K atoms for Ba atoms,which introduces itinerant hole carriers into the p orbitals of P atoms so as to link distant Mn moments with the spin-polarized hole carriers via the p-d hybridization between P and Mn atoms,is very crucial for the appearance of ferromagnetism in the compound.Furthermore,applying hydrostatic pressure first enhances and then decreases the ferromagnetic coupling in (Ba0.75K0.25)(Zn0.944Mn0.056)2P2 at a turning point around 15 GPa,which results from the combined effects of the pressure-induced variations of electron delocalization and p-d hybridization.Compared with the BaZn2As2-based DMS,the substitution of P for As can modulate the magnetic coupling effectively.Both the results for BaZn2P2-based and BaZn2As2-based DMSs demonstrate that the robust antiferromagnetic (AFM) coupling between the nearest Mn-Mn pairs bridged by anions is harmful to improving the performance of these Ⅱ-Ⅱ-Ⅴ based DMS materials.
机译:通过使用第一性原理电子结构计算,我们研究了拟议的基于BaZn2P2的稀磁半导体(DMS)中的磁性相互作用。对于典型的仅具有自旋掺杂的化合物Ba(Zn0.944Mn0.056)2P2,由于超交换锰原子之间的相互作用和缺乏流动剂的相互作用,短程反铁磁耦合占主导地位。用K原子部分取代Ba原子,这将流动剂空穴载流子引入P原子的p轨道,从而将遥远的Mn矩与自旋原子连接起来。通过P和Mn原子之间的pd杂化产生的极化空穴载流子对于化合物中铁磁性的出现非常关键。此外,施加静水压力首先会增强然后降低(Ba0.75K0.25)(Zn0.944Mn0)中的铁磁耦合.056)2P2在大约15 GPa的转折点处产生,这是由于压力引起的电子离域和pd杂化变化的综合作用所致。基于As2的DMS,用P替代As可以有效地调节磁耦合。基于BaZn2P2和BaZn2As2的DMS的结果均表明,最接近的由阴离子桥接的Mn-Mn对之间的强反铁磁(AFM)耦合为有害于提高这些基于Ⅱ-Ⅱ-Ⅴ的DMS材料的性能。

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  • 来源
    《中国物理:英文版》 |2018年第6期|367-373|共7页
  • 作者单位

    Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices,Renmin University of China, Beijing 100872, China;

    Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices,Renmin University of China, Beijing 100872, China;

    Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices,Renmin University of China, Beijing 100872, China;

  • 收录信息 中国科学引文数据库(CSCD);中国科技论文与引文数据库(CSTPCD);
  • 原文格式 PDF
  • 正文语种 eng
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