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Distinctive distribution of defects in CdZnTe:In ingots and their effects on the photoelectric properties

机译:CdZnTe:In晶锭中缺陷的独特分布及其对光电性能的影响

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摘要

Photoelectric properties of CdZnTe:In samples with distinctive defect distributions are investigated using various techniques.Samples cut from the head (T04) and tail (W02) regions of a crystal ingot show distinct differences in Te inclusion distribution.Obvious difference is not observed in Fourier transform infrared (FTIR) spectra,UV-Vis-NIR transmittance spectra,and Ⅰ-Ⅴ measurements.However,carrier mobility of the tip sample is higher than that of the tail according to the laser beam induced current (LBIC) measurements.Low temperature photoluminescence (PL) measurement presents sharp emission peaks of D0X and A0X,and relatively large peak of D0X (or A0X) / Dcomplex for T04,indicating a better crystalline quality.Thermally stimulated current (TSC) spectrum shows higher density of shallow point defects,i.e.,Cd vacancies,Incd+,etc.,in W02 sample,which could be responsible for the deterioration of electron mobility.
机译:CdZnTe的光电性能:使用多种技术研究了具有独特缺陷分布的样品,从晶锭的头部(T04)和尾部(W02)切下的样品在Te夹杂物分布方面存在明显差异,在傅立叶中未观察到明显差异。红外光谱(FTIR),紫外-可见-近红外(UV-Vis-NIR)透射光谱以及Ⅰ-Ⅴ测量。但是,根据激光束感应电流(LBIC)测量,尖端样品的载流子迁移率高于尾部。光致发光(PL)测量显示出T0和A0X的发射峰很尖锐,而T04的D0X(或A0X)/ Dcomplex的发射峰相对较大,表明晶体质量更好。热激发电流(TSC)光谱显示出较高密度的浅点缺陷, W02样品中的Cd空位,Incd +等可能是导致电子迁移率下降的原因。

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  • 来源
    《中国物理:英文版》 |2018年第3期|417-421|共5页
  • 作者单位

    State Key Laboratory of Solidification Processing, and Ministry of Industry and Information Technology(MIIT)Key Laboratory of Radiation Detection Materials and Devices, Northwestern Polytechnical University, Xi'an 710072, China;

    State Key Laboratory of Solidification Processing, and Ministry of Industry and Information Technology(MIIT)Key Laboratory of Radiation Detection Materials and Devices, Northwestern Polytechnical University, Xi'an 710072, China;

    State Key Laboratory of Solidification Processing, and Ministry of Industry and Information Technology(MIIT)Key Laboratory of Radiation Detection Materials and Devices, Northwestern Polytechnical University, Xi'an 710072, China;

    State Key Laboratory of Solidification Processing, and Ministry of Industry and Information Technology(MIIT)Key Laboratory of Radiation Detection Materials and Devices, Northwestern Polytechnical University, Xi'an 710072, China;

    State Key Laboratory of Solidification Processing, and Ministry of Industry and Information Technology(MIIT)Key Laboratory of Radiation Detection Materials and Devices, Northwestern Polytechnical University, Xi'an 710072, China;

    State Key Laboratory of Solidification Processing, and Ministry of Industry and Information Technology(MIIT)Key Laboratory of Radiation Detection Materials and Devices, Northwestern Polytechnical University, Xi'an 710072, China;

    State Key Laboratory of Solidification Processing, and Ministry of Industry and Information Technology(MIIT)Key Laboratory of Radiation Detection Materials and Devices, Northwestern Polytechnical University, Xi'an 710072, China;

    State Key Laboratory of Solidification Processing, and Ministry of Industry and Information Technology(MIIT)Key Laboratory of Radiation Detection Materials and Devices, Northwestern Polytechnical University, Xi'an 710072, China;

    State Key Laboratory of Solidification Processing, and Ministry of Industry and Information Technology(MIIT)Key Laboratory of Radiation Detection Materials and Devices, Northwestern Polytechnical University, Xi'an 710072, China;

    State Key Laboratory of Solidification Processing, and Ministry of Industry and Information Technology(MIIT)Key Laboratory of Radiation Detection Materials and Devices, Northwestern Polytechnical University, Xi'an 710072, China;

    State Key Laboratory of Solidification Processing, and Ministry of Industry and Information Technology(MIIT)Key Laboratory of Radiation Detection Materials and Devices, Northwestern Polytechnical University, Xi'an 710072, China;

    School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China;

  • 收录信息 中国科学引文数据库(CSCD);中国科技论文与引文数据库(CSTPCD);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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