The doping effects of rare earth oxides Ho2O3 and Er2O3 on dielectric properties of BaTiO3-based ceramics were studied. After adding rare earth elements, grain growth in this system was inhibited and the grain size was reduced evidently which realized the fine-grained effect. In this system, the trivalent oxides Ho2O3 and Er2O3 were added to BaTiO3 ceramics. The rare earth oxides do not enter into inner lattice totally to replace A or B sites. Some of additives can improve dielectric strength by forming nonferroelectric phases, and the rest maintained at grain boundaries controls overgrowth of grains. The dielectric constant at room temperature is increased up to 3000 and the curve of TCC becomes flat. Meanwhile, the dielectric strength Eb becomes higher.
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