PbS纳米晶修饰的ZnO/PVP复合电双稳器件阻变机制

摘要

采用简单旋涂工艺制备了具有ITO/PVP/ZnO NCs/PbS NCs/PVP/Al 夹心结构的有机/无机复合电双稳存储器件,与没有PbS纳米晶修饰层的器件ITO/PVP/ZnO NCs/PVP/Al相比,PbS纳米晶的引入使目标器件的开关比提高了2个数量级。结合器件的I-V曲线和能级结构分析了PbS 纳米晶修饰层对器件阻变和载流子传输的影响。结果显示,PbS纳米晶层的加入不仅优化了器件能级结构,有利于载流子的俘获和释放,还修饰了ZnO纳米晶的表面缺陷,降低了器件载流子的复合损耗。%An organic/inorganic composite electrical bistable device with the sandwich structure of ITO/PVP/ZnO nanocrystal ( NCs)/PbS nanocrystal ( NCs)/PVP/Al was fabricated. Compared with the device structure of ITO/PVP/ZnO NPs/PVP/Al, the ON/OFF ratio of target device was im-proved by 2 orders of magnitude. The carrier transportation and resistance switching mechanism of device were discussed via I-V characteristics and the energy band structures of the devices. The ef-fective capture/release of electrons could be attributed to the optimization of device structure and modification of ZnO NCs surface by PbS NCs layer.