A Practical Design of X-Band Receiver Front-End in 65-nm CMOS

摘要

A low-cost low-power area-efficient receiver front-end prototype for X-band applications is presented.The front-end primarily consists of 3 blocks: a singleended input differential-output Low noise amplifier（LNA）,a double balanced down-converter, and Inter-frequency（IF） buffers providing single-ended output. Including are also Low dropout regulators（LDO） and Electrostatic discharge（ESD） protection circuits coinciding with the forgoing blocks. Local oscillator（LO） frequency is chosen such that output signal locates in L/S-band for extending subsequent applications. Experimentally exhibiting a conversion gain of around 44 dB with 7.5-dB Single-sideband（SSB）Noise figure（NF）, the front-end totally draws 24 m A from an external 3.3-V supply. Fabricated in a 65-nm CMOS technology, this compact receiver occupies an area of only0.22mm~2.