首页> 中文期刊> 《中国化学工程学报(英文版)》 >Hydrogenation of Silicon Tetrachloride in Microwave Plasma

Hydrogenation of Silicon Tetrachloride in Microwave Plasma

         

摘要

This study investigated the hydrogenation of silicon tetrachloride (SiCl4) in microwave plasma. A new launcher of argon (Ar) and hydrogen (H2) plasma was introduced to produce a non-thermodynamic equilibrium ac-tivation plasma. The plasma state exhibited a characteristic temperature related to the equilibrium constant, which was termed“Reactive Temperature”in this study. Thus, the hydrogenation of SiCl4 in the plasma could easily be handled with high conversion ratio and very high selectivity to trichlorosilane (SiHCl3). The effects of SiCl4/Ar and H2/Ar ratios on the conversion were also investigated using a mathematical model developed to determine the op-timum experimental parameters. The highest hydrogenation conversion ratio was produced at a H2/SiCl4 molar ratio of 1, with mixtures of SiCl4 and H2 to Ar molar ratio of 1.2 to 1.4. In this plasma, the special system pressure and incident power were required for the highest energy efficiency of hydrogenating SiCl4, while the optimum system pressure varies from 26.6 to 40 kPa depending on input power, and the optimum feed gas (H2 and SiCl4) molar en-ergy input was about 350 kJ·mol-1.

著录项

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号