首页> 中文期刊> 《高等学校化学研究:英文版》 >Structure and Properties of Semiconductor Microclusters Ga_nP_n(n=1-4): A First Principle Study

Structure and Properties of Semiconductor Microclusters Ga_nP_n(n=1-4): A First Principle Study

         

摘要

The possible geometrical structures and relative stabilities of semiconductor microclusters Ga-%n%P-%n(n%=14) were studied by virtue of density functional calculations with generalized gradient approximation(B3LYP). For the most stable isomers of Ga-%n%P-%n(n%=14) clusters, the electronic structure, vibrational properties, dipole moment, polarizability and ionization potential were analyzed by means of HF, MP2, CISD and B3LYP methods with different basis sets.

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