Influences of Ion Tracks on Two-dimensional Functional Materials and Devices

摘要

The radiation effects in device induced by energetic heavy ions can lead to degradation or failure and have become a major threat to safe operation of spacecraft.Two-dimensional functional materials have unique structures and physical properties.They are expected to be the main materials of a new generation electronic devices.However,when the thicknesses of the materials are reduced to nanometers,its performance influenced by lattice defects will become more serious.Therefore,it is critical to study defects formation and its influences on the properties of two-dimensional functional materials.