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Radio Frequency Switch Design with Interference Suppression and Electrostatic Discharge for 5th Generation of Mobile Network

机译:第五代移动网络中具有干扰抑制和静电放电的射频开关设计

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摘要

In the next few years, the 5th generation of mobile network employing the massive multiple input multiple output (MIMO), beam-forming, mm-wave frequency bands and carrier aggregation techniques will further increase the data rate to enrich the growing of mobile devices at the price of more complex multi-band, multi-frequency front end module (FEM). As an indispensable part of radio-frequency front end (RFFE), antenna switch circuit needs more restrict performance not only the basic insertion loss, isolation and power handling capability, but the requirements from higher data rate, low interference and better reliability of 5G application.;To achieve those additional requirements for 5G RF switch with 45nm silicon-on-insulator (SOI) CMOS technology, this dissertation presents a novel multi-bands switch array structure to analysis the interference between switches in a single chip. The comprehensive study of switch array reveals that existing noise isolation techniques are insufficient and calls for novel in-die interference elimination. To reduce this in-die crosstalk, an above-silicon through back-end-of-line (BEOL) metal wall is developed as a practical solution with about 18.5dB (~98.6%) suppression. To reach a higher data rate with available frequency bands, millimeter wave (mm-wave) switches (28GHz/38GHz) has been demonstrated with the consideration of reliability issue of electrostatic discharge (ESD) which will introduce severe parasitic effects under this frequency level and degrade the performance of RFICs. The insertion loss and isolation together with ESD protection capability have been compared which shows the importance of ESD-RFIC co-design. Considering the necessity of accurate estimation for ESD performance, a novel methodology for both human body model (HBM) and charged device model (CDM) ESD protections using combined TCAD simulation and TLP/VFTLP measurements is depicted. To improve the accuracy of parasitic capacitance extraction, this dissertation introduces an enhanced de-embedded method with the help of HFSS simulation which reduces one third of the testchip size and gives a better reference for co-design.
机译:在未来几年中,采用大规模多输入多输出(MIMO),波束成形,毫米波频段和载波聚合技术的第五代移动网络将进一步提高数据速率,从而丰富移动设备的增长。更复杂的多频带,多频率前端模块(FEM)的价格。作为射频前端(RFFE)不可或缺的一部分,天线开关电路不仅需要更多的性能限制,不仅需要基本的插入损耗,隔离和功率处理能力,还需要更高的数据速率,更低的干扰和5G应用的更高可靠性的要求为了满足采用45nm绝缘体上硅(SOI)CMOS技术的5G RF开关的那些额外要求,本文提出了一种新颖的多频带开关阵列结构,以分析单个芯片中开关之间的干扰。对开关阵列的综合研究表明,现有的噪声隔离技术还不够,因此需要新颖的管芯内干扰消除技术。为了减少这种管芯内的串扰,开发了一种通过线路后端(BEOL)的硅上金属壁作为实用的解决方案,具有约18.5dB(〜98.6%)的抑制能力。为了在可用频段上达到更高的数据速率,已经证明了毫米波(mm-wave)开关(28GHz / 38GHz),其中考虑了静电放电(ESD)的可靠性问题,该问题会在该频率水平下引入严重的寄生效应,并且降低RFIC的性能。比较了插入损耗和隔离以及ESD保护功能,这表明ESD-RFIC协同设计的重要性。考虑到需要准确估计ESD性能,描述了一种结合了TCAD仿真和TLP / VFTLP测量的新型人体模型(HBM)和带电设备模型(CDM)ESD保护方法。为了提高寄生电容提取的精度,本文在HFSS仿真的帮助下引入了一种增强的去嵌入方法,该方法减少了测试芯片的三分之一,为共同设计提供了更好的参考。

著录项

  • 作者

    Wang, Chenkun.;

  • 作者单位

    University of California, Riverside.;

  • 授予单位 University of California, Riverside.;
  • 学科 Electrical engineering.
  • 学位 Ph.D.
  • 年度 2018
  • 页码 137 p.
  • 总页数 137
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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