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Graphene Metrology: Substrate and Environmental Effects on Graphene

机译:石墨烯计量学:石墨烯的基质和环境影响

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摘要

Graphene, a single layer of sp2-bonded carbon atoms, has received significant attention due to its exceptional opto-electronic properties and potentially scalable production processes. However, scalable graphene requires an underlying substrate, which is often a source of strain, doping and carrier scattering, limiting the mobility and quality of graphene. It was shown that by intercalating graphene on SiC by hydrogen, the interfacial layer, associated with n-doping and mobility degradation, is de-coupled from the substrate. The transformations of the H2-intercalation were demonstrated using Raman spectroscopy, while the SiC/interface changes were probed using surface enhanced Raman scattering. The H2-intercalation resulted in carrier type inversion, where the decoupled graphene change from n- to p-type, as well as showing mobility enhancement, up to more than four times, compared to as-grown graphene. Using calibrated Kelvin probe force microscopy, local work function maps were generated, demonstrating the changes in local electronic properties with nanoscale resolution. Furthermore, the layer structure, doping and strain induced by the underlying substrate are compared to CVD grown graphene transferred onto Si/SiO2.;In addition to the substrate effects, the electronic properties of graphene are also significantly affected due to the direct exposure of pi electrons to the environment. For the investigation of the environmental effects on graphene (i.e. H2O and NO2), a custom-built environmental transport properties measurement system was designed and developed, allowing magneto-transport measurements to be conducted in highly controlled environments. Using this system and calibrated local work function mapping, it is demonstrated that water withdraws electrons from graphene on SiC and SiO2 substrates, as well as acting as a source of impurity scattering. However, the sensitivity of graphene to water depends highly on the underlying substrate and substrate-induced doping. Moreover, it is shown that epitaxial graphene can successfully be used as the sensing material with detection down to 10 parts-per-billion molecules. Considering the environmental effects on the electronic properties of graphene, the importance of clearly reporting the measurement environmental conditions is high-lighted, whenever a routine characterisation for carrier concentration and mobility is reported.
机译:石墨烯是sp2键合的碳原子的单层,由于其卓越的光电性能和潜在的可扩展生产工艺而受到了广泛的关注。然而,可缩放的石墨烯需要下面的衬底,该衬底通常是应变,掺杂和载流子散射的来源,从而限制了石墨烯的迁移率和质量。结果表明,通过用氢在SiC上嵌入石墨烯,与n掺杂和迁移率降低相关的界面层与基板分离。使用拉曼光谱法证明了H2插层的转变,而使用表面增强拉曼散射探测了SiC /界面的变化。 H 2插入导致载流子类型反转,其中解耦的石墨烯从n型变为p型,并且显示出比生长的石墨烯高多达四倍的迁移率增强。使用校准的开尔文探针力显微镜,生成了局部功函数图,证明了纳米尺度分辨率下局部电子性能的变化。此外,将底层衬底的层结构,掺杂和应变与转移到Si / SiO2上的CVD生长的石墨烯进行了比较。除了衬底效应之外,由于pi的直接暴露,石墨烯的电子性能也受到显着影响电子进入环境。为了研究环境对石墨烯(即H2O和NO2)的影响,设计并开发了定制的环境传输特性测量系统,可以在高度受控的环境中进行磁迁移测量。使用该系统和校准的局部功函数作图,证明水可从SiC和SiO2基板上的石墨烯中抽出电子,并充当杂质散射的来源。然而,石墨烯对水的敏感性高度取决于下面的基底和基底诱导的掺杂。而且,显示出外延石墨烯可以成功地用作检测材料,其检测低至十亿分之十的分子。考虑到环境对石墨烯电子性能的影响,每当报告了载流子浓度和迁移率的常规表征时,清楚地报告测量环境条件的重要性就显得尤为重要。

著录项

  • 作者

    Melios, Christos.;

  • 作者单位

    University of Surrey (United Kingdom).;

  • 授予单位 University of Surrey (United Kingdom).;
  • 学科 Materials science.;Nanotechnology.
  • 学位 D.Eng.
  • 年度 2017
  • 页码 172 p.
  • 总页数 172
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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