首页> 外文学位 >Etude DFT des proprietes structurales et electroniques d'un cristal de poly(3-hexylthiophene) regioregulier.
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Etude DFT des proprietes structurales et electroniques d'un cristal de poly(3-hexylthiophene) regioregulier.

机译:DFT研究规则聚(3-己基噻吩)晶体的结构和电子性质。

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摘要

The search for new clean and renewable energy source targets several technologies, one of which is photovoltaic cells. However, a widespread use of photovoltaic cells is greatly hindered by their manufacturing costs. The use of polymeric semiconductor in photovoltaic cells could take advantage of the large-scale and low-cost production techniques associated with polymers to overcome this limitation. Current organic photovoltaic cells, composed of a bulk heterojunction combining an elecron donor polymer and an electron acceptor molecule or polymer, are not efficient enough to be viable. One way for increasing the efficiency of the organic photovoltaic cells is to improve charge carrier transport in the hetero junction. However, since the organic semiconductors structural and electronic properties are not yet well established in the literature, it is necessary to address this issue before.;The theoretical study is performed with density functional theory (DFT) calculations within the local density approximation (LDA). The softwares used, SIESTA and ABINIT, employ pseudopotentials built according to the Troullier-Martins method by using the Ceperley-Alder exchange-correlation functional. The different parameters defining the planewave basis set (ABINIT) or the atomic orbital basis set (SIESTA) are optimized until the error on the total energy is less than 0.02%. Finally, the geometry is optimized until the maximum force in the system is lower than 2, 5 x 10-3 eV/A (4 pN).;The geometry as well as the electronic properties of the wavefunctions obtained for polythiophene are very close to those previously described in the literature. The differences in geometry between the DFT calculations from the literature and the present research project are lower than 1,7%. Moreover, the band gap of 1,05 eV (1,09 eV) calculated with SIESTA (ABINIT), is consistent with the expected underestimation with respect to the experimental value within DFT-LDA limits. Thereafter, the 21 screw axis symmetry present in the polythiophene unit cell is used to explain in detail the band foldings and the avoided band crossings observed in the band structure.;The configuration and geometry study of the rrP3HT crystal have helped to corroborate a model proposed in the literature which presumes that the alkyl side chains are tilted in order to adapt to the unit cell dimension. The calculated equilibrium spacing between two consecutive polymer chains in the pi stacking direction of 3,42 A leads to relatively strong intrachain wavefunction overlap and band dispersion in this direction. This overlap causes the band gap and the HOMO and LUMO bands to be greatly influenced by the unit cell dimension in the pi stacking direction. Near the equilibrium geometry, a 1 A reduction of the dimension in the pi stacking direction closes the band gap by 0,49 eV due to the increasing dispersion of the HOMO and LUMO bands. The equilibrium band gap is 0,145 eV. The HOMO band dispersion has variation rates of 0,485 eV/A and 0,362 eV/A whereas the LUMO band dispersion has variation rates of 0.671 eV/A and 0,420 eV/A respectively in the Gamma-Y and the Gamma-Z directions. It is interesting to note that the dimension variation in the pi stacking direction does not only influences the band dispersion in this direction, but it also influences the band dispersion in the intrachain direction. The change in the pi stacking direction dimension that requires a pressure of 210 MPa causes a variation of the band gap up to 53% of its equilibrium value. Under the same unit cell deformation, the HOMO and LUMO band dispersion varies from 8 to 13% in the Gamma-Y diection and from 2 to 3% in the Gamma-Z direction. Such variations of the electronic properties associated with relatively weak geometrical deformations of the system are of great importance because they prove that the design of the electronic properties of typical materials used in organic photovoltaic cells is technically feasible. The present results significantly contributes to the advance in the engineering of high performance organic photovoltaic cells that requires an optimization of the electronic properties of the materials.;The main goal of this research project is to theoretically study the structure and electronic properties of regioregular poly(3-hexylthiophene) (rrP3HT), a typical organic semiconductor used in organic photovoltaic cells. This system is studied under various constraints in order to obtain its electronic properties for a broad range of external perturbations. The accuracy of the results are ensured by calculation on polythiophene, a well described simple system similar in nature to rrP3HT. The long term goal of this study is to understand and engineer the electronic and structural properties of organic semiconductor blends in order to achieve higher efficiency in organic photovoltaic cells.
机译:寻找新的清洁和可再生能源的目标是多种技术,其中之一是光伏电池。但是,光伏电池的制造成本极大地阻碍了光伏电池的广泛使用。在光伏电池中使用聚合物半导体可以利用与聚合物相关的大规模,低成本的生产技术来克服这一限制。由结合电子给体聚合物和电子受体分子或聚合物的本体异质结组成的当前有机光伏电池效率不足以使其可行。一种提高有机光伏电池效率的方法是改善异质结中的载流子传输。但是,由于有机半导体的结构和电子性能尚未在文献中得到很好的确立,因此有必要在此之前解决这个问题。;在局部密度近似(LDA)范围内用密度泛函理论(DFT)计算进行了理论研究。 。所使用的软件SIESTA和ABINIT通过使用Ceperley-Alder交换相关函数,采用了根据Troullier-Martins方法构建的伪势。优化定义平面波基础集(ABINIT)或原子轨道基础集(SIESTA)的不同参数,直到总能量的误差小于0.02%。最后,优化几何结构,直到系统中的最大力低于2,5 x 10-3 eV / A(4 pN).;聚噻吩获得的波函数的几何结构和电子性质非常接近那些先前在文献中描述过的。文献中的DFT计算与本研究项目之间的几何差异小于1.7%。而且,用SIESTA(ABINIT)计算出的1.05 eV(1,09 eV)的带隙与DFT-LDA范围内的实验值的预期低估相符。此后,聚噻吩晶胞中存在的21个螺旋轴对称性被用来详细解释在带结构中观察到的能带折叠和避免的能带穿越。; rrP3HT晶体的构型和几何学研究有助于证实所提出的模型在文献中假定烷基侧链是倾斜的以适应晶胞尺寸。计算出的两个连续的聚合物链之间在pi堆积方向上的平衡间距为3.42 A,导致在该方向上相对较强的链内波函数重叠和谱带分散。该重叠导致带隙以及HOMO和LUMO带受到π堆叠方向上的晶胞尺寸的极大影响。在平衡几何附近,由于HOMO和LUMO频带的色散增加,在pi堆叠方向上尺寸减小1 A可使带隙减小0.49 eV。平衡带隙为0.145 eV。 HOMO频带色散在Gamma-Y和Gamma-Z方向的变化率分别为0,485 eV / A和0,362 eV / A,而LUMO频带色散的变化率分别为0.671 eV / A和0,420 eV / A。有趣的是,在pi堆积方向上的尺寸变化不仅影响该方向上的带分散,而且还影响链内方向上的带分散。 pi堆积方向尺寸的变化需要210 MPa的压力,导致带隙变化高达其平衡值的53%。在相同的晶胞变形下,HOMO和LUMO谱带的色散在Gamma-Y方向上变化为8%至13%,在Gamma-Z方向上变化为2%至3%。与系统的相对较弱的几何变形相关的电子特性的这种变化非常重要,因为它们证明了有机光伏电池中使用的典型材料的电子特性的设计在技术上是可行的。本研究结果为高性能有机光伏电池工程的发展做出了重要贡献,要求对材料的电子性能进行优化。该研究项目的主要目标是从理论上研究区域规则的聚( 3-hexylthiophene)(rrP3HT),一种用于有机光伏电池的典型有机半导体。为了获得各种外部扰动的电子特性,需要在各种约束条件下研究该系统。通过在聚噻吩上进行计算来确保结果的准确性,聚噻吩是一种与rrP3HT本质相似的描述充分的简单系统。这项研究的长期目标是了解和设计有机半导体混合物的电子和结构特性,以便在有机光伏电池中实现更高的效率。

著录项

  • 作者

    Maillard, Arnaud.;

  • 作者单位

    Ecole Polytechnique, Montreal (Canada).;

  • 授予单位 Ecole Polytechnique, Montreal (Canada).;
  • 学科 Physics Molecular.;Physics Condensed Matter.;Physics Atomic.
  • 学位 M.Sc.A.
  • 年度 2008
  • 页码 102 p.
  • 总页数 102
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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