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Highly Integrated CMOS Interface Circuits for SiPM Based PET Imaging Systems.

机译:用于基于SiPM的PET成像系统的高度集成的CMOS接口电路。

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摘要

Recent developments in the area of Positron Emission Tomography (PET) detectors using Silicon Photomultipliers (SiPMs) have demonstrated the feasibility of higher resolution PET scanners due to a significant reduction in the detector form factor. However, reduced size implies a corresponding increase in the detector density, resulting in a proportional rise in the number of channels interfacing a SiPM array with the digital backend. This thesis explores a row-column-diagonal decoding architecture to simplify and reduce the required channels between the individual elements in the SiPM array, and the backend digital electronics. The front-end interface is designed using a current amplifier with a very low input impedance. Accumulation of noise presents itself as a challenge to the row-column summation architecture. This may lead to an increased chance of false triggering as compared to a more traditional approach using dedicated single-channel readout for each individual SiPM device. This work uses a current comparator topology to act as a thresholding circuit to minimize the accumulation of `dark noise' and reduce the possibility of a false triggering event. A separate high-speed timing channel is designed to acquire the timing information across all the channels. Line drivers are used to interface this chip to a wide variety of impedances, allowing a general purpose interface to the digital backend. The proposed readout electronics has been realized in STMicroelectronics 130 nm CMOS process.
机译:使用硅光电倍增管(SiPM)的正电子发射断层扫描(PET)检测器领域的最新发展已证明,由于大大减小了检测器的外形尺寸,因此可以使用高分辨率PET扫描仪。然而,减小的尺寸意味着检测器密度的相应增加,导致与SiPM阵列与数字后端接口的通道数量成比例增加。本文探讨了行列对角线解码架构,以简化和减少SiPM阵列中各个元素与后端数字电子设备之间所需的通道。前端接口是使用具有非常低输入阻抗的电流放大器设计的。噪声的累积本身对行-列求和体系结构构成了挑战。与针对每个单独的SiPM设备使用专用单通道读数的传统方法相比,这可能导致错误触发的机会增加。这项工作使用电流比较器拓扑结构作为阈值电路,以最大程度地减少“暗噪声”的积累并减少错误触发事件的可能性。一个单独的高速定时通道被设计为在所有通道上获取定时信息。线路驱动器用于将该芯片连接至各种阻抗,从而允许通用接口连接至数字后端。拟议的读出电子器件已通过STMicroelectronics的130 nm CMOS工艺实现。

著录项

  • 作者

    Dey, Samrat.;

  • 作者单位

    University of Washington.;

  • 授予单位 University of Washington.;
  • 学科 Electrical engineering.
  • 学位 Masters
  • 年度 2015
  • 页码 71 p.
  • 总页数 71
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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