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A new integrated pixel detector for high-energy physics.

机译:一种用于高能物理的新型集成像素检测器。

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摘要

Several types of radiation such as x-rays, infrared light, and ionizing particles can be detected by means of reverse biased pin-diodes. In high energy physics, pin-diode-based detectors for high energy sub-atomic particles have provided improved signal to noise ratio and better spatial resolution compared to the traditional gas-based detectors, and have become a crucial part in current experiments.; We have fabricated integrated pixel devices which have the high-resistivity, signal-charge collecting volume and the readout circuitry in a single piece of silicon. The integration of both detecting elements and circuitry is carried out by building the circuitry on top of the detecting elements maximizing spatial resolution. Signal charge is collected by a designated collection electrode rather than by the circuitry, where it would be lost for readout. The prototype contains an array of 10 by 30 pixels, each 125 by 34 square microns.; The manufacturing process, based on the Stanford BiCMOS process, only contains steps used in conventional IC-processing, except for the double-sided processing. Thirteen masks were needed on the front side of the wafer and three on the back to implement both CMOS readout circuitry and detecting elements. A special gettering step helped obtain low leakage currents (the bulk minority carrier lifetime was about 500 microseconds) despite the very high temperature anneals (the well drive-in was 16 hours at 1150 C).; Both circuitry and detecting elements are fully functional. Tests with infrared illumination, gamma irradiation and minimum ionizing particles indicated an excellent signal to single-channel noise performance of about 150 to 1 for a minimum ionizing particle, which is an order of magnitude better than silicon strip detectors currently used, a record-breaking position resolution in the direction of smallest pixel (sigma of about 2.2 micron) and good resolution in the other direction. In an efficiency test the detectors did not miss any of the 2665 minimum ionizing particle hits.
机译:可以通过反向偏置的pin二极管检测几种类型的辐射,例如x射线,红外光和电离粒子。在高能物理学中,与传统的基于气体的探测器相比,用于高能亚原子粒子的基于二极管的探测器提供了更高的信噪比和更好的空间分辨率,并且已成为当前实验中的关键部分。我们已经制造出集成的像素器件,该器件在单个硅片中具有高电阻率,信号电荷收集体积和读出电路。通过将电路构建在检测元件的顶部以最大化空间分辨率来执行检测元件和电路两者的集成。信号电荷是由指定的收集电极而不是电路收集的,在电路中,信号电荷会丢失以进行读出。原型包含一个10 x 30像素的阵列,每个像素125 x 34平方微米。基于斯坦福BiCMOS工艺的制造工艺,除双面工艺外,仅包含常规IC工艺中使用的步骤。晶圆正面需要十三个掩模,背面需要三个掩模,以实现CMOS读出电路和检测元件。尽管进行了非常高的温度退火(在1150℃下,井的驱动时间为16小时),但特殊的吸气步骤仍有助于获得低泄漏电流(少数载流子的寿命约为500微秒)。电路和检测元件均功能齐全。在红外照明,伽马射线照射和最小电离粒子的测试中,对于最小电离粒子,单通道噪声性能达到了约150:1的出色信号,比目前使用的硅条检测器好一个数量级,创下了记录在最小像素方向上的位置分辨率(大约2.2微米的sigma),在另一个方向上的分辨率很好。在效率测试中,检测器没有遗漏任何2665个最小电离粒子。

著录项

  • 作者

    Snoeys, Walter Jan.;

  • 作者单位

    Stanford University.;

  • 授予单位 Stanford University.;
  • 学科 Engineering Electronics and Electrical.; Physics Elementary Particles and High Energy.
  • 学位 Ph.D.
  • 年度 1992
  • 页码 226 p.
  • 总页数 226
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;高能物理学;
  • 关键词

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