Mesh generation and information model for device simulation.

摘要

Automated mesh generation is a major challenge for semiconductor device and process simulation. In the past, various mesh generation schemes have been proposed and implemented to solve systems of linear and non-linear partial differential equations. However, few of them can be directly adopted by technology CAD (TCAD) tools due to special requirements imposed by TCAD applications. In this study, an automatic mesh generation scheme suited for device simulators, such as PISCES and STRIDE, is presented and the mesh generator is integrated with a device simulation environment using an information model based framework.; In the first part of the study, the implementation of a tree based semi-structured mesh generation scheme is discussed. Two major enhancements, the level control function and the {dollar}delta{dollar}-zone, distinguish the new scheme from traditional tree based mesh generation schemes. With the enhancements, a balanced optimal quadtree/octree is guaranteed and a quality mesh is generated for both the interior region and the region near the boundary.; In the second part of the study, an information model based framework is proposed for TCAD applications. A prototype framework based on the Semiconductor Wafer Representation (SWR) is implemented. The framework provides (i) a complete 3D information model for the wafer state and (ii) services to facilitate TCAD tool development. By sharing a common information model, different TCAD simulators are able to produce a set of consistent and cohesive simulation data. The prototype incorporates both PISCES and FASTCAP to extract, respectively, the device and interconnect behavior using the same information model. An SRAM example is used to demonstrate how a 3D information model based device simulation system can be utilized in a device design process.