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Cesium dioxide and yttrium oxide systems: Powder synthesis, sintering characteristics, and dopant effects.

机译:二氧化铯和氧化钇体系:粉末合成,烧结特性和掺杂效应。

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摘要

New methods have been successfully developed to synthesize high yield, nanocrystalline {dollar}rm CeOsb2{dollar} and {dollar}rm Ysb{lcub}2{rcub}Osb3{dollar} powders. These powders were highly sinterable. The lowest temperatures required to reach full density for these powders were below 0.45 of their melting points.; The sintering characteristics of these nanocrystalline powders were studied and their microstructural evolution during sintering was examined. The normalized pore size distributions exhibited a "universal" characteristic that is only density dependent and can be described by a simple particle network model. From these distributions, a method was established to determine the critical normalized pore size, beyond which pores are thermodynamically stable. This size is dependent on the dihedral angle which was determined in the present study. At high densities, pores are subcritical and they shrink following the conventional sintering theory. In this regime, the size effect on the sintering rate, in the form of Herring's scaling law, was verified for nanocrystalline powders assuming grain boundary diffusion to be the dominate transport mechanism. At low densities when the majority of pores are supercritical, particle coarsening was found to contribute to increasing packing density even without any space filling at the interparticle neck. Since nanocrystalline {dollar}rm CeOsb2{dollar} powders coarsen rapidly, this mechanism was responsible for the remarkable sinterability of some {dollar}rm CeOsb2{dollar} compacts which had a density as low as 18%.; Dopants covering a wide range of charges and sizes have been chosen to investigate their effect on grain boundary mobility. In both {dollar}rm CeOsb2{dollar} and {dollar}rm Ysb{lcub}2{rcub}Osb3{dollar} systems, grain boundary mobility is controlled by cation diffusion, and cations diffuse by an interstitial mechanism that can be enhanced by the presence of oxygen vacancies, as in acceptor doping, or suppressed by the presence of oxygen interstitials, as in donor doping. At high dopant concentrations, a solute drag mechanism may operate that can suppress grain boundary mobility. This was verified by using acceptor dopants. Grain boundary mobility is further influenced by dopant-defect interactions which are charge and size dependent. Severely undersized dopants have a tendency to markedly enhance grain boundary mobility, due to the destabilizing distortion of the surrounding lattice that apparently facilitates defect migration. This accounted for some anomalous effects that were observed for dopants such as Sc, Ti, and Nb.; Dopant effects on sintering of CeO{dollar}sb2{dollar} and {dollar}rm Ysb{lcub}2{rcub}Osb3{dollar} have also been studied. Their major effects can be summarized as due to the altering of dihedral angle, and the changed rate of coarsening or diffusion. By exerting such influences, dopants were found to affect the microstructural evolution during sintering even at the very early stage. The most beneficial dopants are those which increase dihedral angle and enhance kinetics, particle coarsening notwithstanding. An example of this kind was found in Ti doped {dollar}rm Ysb{lcub}2{rcub}Osb3{dollar}.
机译:已经成功开发了新方法来合成高产率的纳米晶{rm} rm CeOsb2 {dol}和{rm} Ysb {lcub} 2 {rcub} Osb3 {dol}粉末。这些粉末是高度可烧结的。这些粉末达到完全密度所需的最低温度低于其熔点的0.45。研究了这些纳米晶体粉末的烧结特性,并研究了它们在烧结过程中的微观结构演变。归一化的孔径分布表现出仅取决于密度的“通用”特征,并且可以通过简单的粒子网络模型进行描述。根据这些分布,建立了一种确定临界归一化孔径的方法,超过该孔径后,孔是热力学稳定的。该尺寸取决于在本研究中确定的二面角。在高密度下,孔是次临界的,并且按照常规的烧结理论收缩。在这种情况下,以晶格扩散为主要输运机理,对纳米晶粉末验证了尺寸对烧结速率的影响,其形式为鲱鱼定律。在低密度下,当大多数孔为超临界孔时,发现颗粒粗化甚至在颗粒间颈部没有任何空间填充的情况下也有助于增加堆积密度。由于纳米晶的CeOsb2 {美元}粉末迅速变粗,这种机理导致了某些密度低至18%的{CerOsb2 {Dollar}压块的显着烧结性。选择覆盖各种电荷和尺寸的掺杂剂来研究其对晶界迁移率的影响。在{dol} rm CeOsb2 {dollar}和{dolrmrm Ysb {lcub} 2 {rcub} Osb3 {dollar}系统中,晶界迁移率均受阳离子扩散的控制,而阳离子通过间隙机制扩散,该间隙机制可通过提高氧空位的存在(如受体掺杂)或氧间隙(如供体掺杂)抑制。在高掺杂剂浓度下,溶质拖曳机制可能起作用,可以抑制晶界迁移率。通过使用受体掺杂剂对此进行了验证。晶界迁移率进一步受掺杂剂-缺陷相互作用的影响,该相互作用与电荷和尺寸有关。由于周围晶格的不稳定变形明显地促进了缺陷迁移,因此严重不足的掺杂剂具有明显提高晶界迁移率的趋势。这解释了观察到的某些掺杂物(例如Sc,Ti和Nb)的异常效应。还研究了掺杂剂对CeO {sdol2sb2 {dollar}和rms Ysb {lcub} 2 {rcub} Osb3 {dollar}烧结的影响。它们的主要影响可以归结为由于二面角的改变以及粗化或扩散速率的改变。通过施加这样的影响,甚至在很早的阶段,就发现掺杂剂会影响烧结过程中的微观结构演变。最有益的掺杂剂是那些增加二面角并增强动力学的颗粒,尽管颗粒变粗。在掺Ti的{rm} Ysb {lcub} 2 {rcub} Osb3 {dol}中发现了这种例子。

著录项

  • 作者

    Chen, Pei-Lin.;

  • 作者单位

    University of Michigan.;

  • 授予单位 University of Michigan.;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 1995
  • 页码 218 p.
  • 总页数 218
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

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