Structure and electronic properties of cesiated carbon films on Si(100) using negative carbon ion beam.

摘要

The initial growth of carbon film on Si (100) substrates have been investigated by low energy electron diffraction (LEED) and Auger electron spectroscopy (AES). In the initial stages, energetic carbon ions lead to a phase transformation from two domain p(2 x 1) to (1 x 1) LEED structure pattern after about ;The surface electronic properties of cesiated carbon films on Si (100) have also been investigated for co-deposition of neutral Cs and C