Barium titanate and barium strontium titanate thin films were deposited on base metal foils via chemical solution deposition and radio frequency magnetron sputtering. The films were processed at elevated temperatures for densification and crystallization. Two unifying research goals underpin all experiments: (1) To improve our fundamental understanding of complex oxide processing science, and (2) to translate those improvements into materials with superior structural and electrical properties.;The relationships linking dielectric response, grain size, and thermal budget for sputtered barium strontium titanate were illustrated. (Ba 0.6Sr0.4)TiO3 films were sputtered on nickel foils at temperatures ranging between 100-400°C. After the top electrode deposition, the films were co-fired at 900°C for densification and crystallization. The dielectric properties were observed to improve with increasing sputter temperature reaching a permittivity of 1800, a tunability of 10:1, and a loss tangent of less than 0.015 for the sample sputtered at 400°C. The data can be understood using a brick wall model incorporating a high permittivity grain interior with low permittivity grain boundary. However, this high permittivity value was achieved at a grain size of 80 nm, which is typically associated with strong suppression of the dielectric response. These results clearly show that conventional models that parameterize permittivity with crystal diameter or film thickness alone are insufficiently sophisticated. Better models are needed that incorporate the influence of microstructure and crystal structure.;This thesis next explores the ability to tune microstructure and properties of chemically solution deposited BaTiO3 thin films by modulation of heat treatment thermal profiles and firing atmosphere composition. Barium titanate films were deposited on copper foils using hybrid-chelate chemistries. An in-situ gas analysis process was developed to probe the organic removal and the barium titanate phase formation. The exhaust gases emitted during the firing of barium titanate films were monitored using a residual gas analyzer (RGA) to investigate the effects of ramp rate and oxygen partial pressure. The dielectric properties including capacitor yield were correlated to the RGA data and microstructure. This information was used to tailor a thermal profile to obtain the optimum dielectric response. A ramp rate of 20°C/min and a pO2 of 10-13 atm resulted in a permittivity of 1500, a loss tangent of 0.035 and a 90% capacitor yield in 0.5 mm dot capacitors. Yield values above 90% represent a significant advantage over preexisting reports and can be attributed to an improved ability to control final porosity.;Finally, the dramatic enhancement in film density was demonstrated by understanding the processing science relationships between organic removal, crystallization, and densification in chemical solution deposition. The in situ gas analysis was used to develop an each-layer-fired approach that provides for effective organic removal, thus pore elimination, larger grain sizes, and superior densification. The combination of large grain size and high density enabled reproducing bulk-like dielectric properties in a thin film. A room temperature permittivity of 3000, a 5 muF/cm2 capacitance density, and a dielectric tunability of 15:1 were achieved.;By combining the data sets generated in this thesis with those of comparable literature reports, we were able to broadly rationalize scaling effects in polycrystalline thin films. We show that the same models successfully applied to bulk ceramic systems are appropriate for thin films, and that models involving parasitic interfacial layers are not needed. Developing better models for scaling effects were made possible solely by advancing our ability to synthesize materials thus eliminating artifacts and extrinsic effects.
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