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Integrated optics based on erbium-doped glass waveguides.

机译:基于掺glass玻璃波导的集成光学器件。

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摘要

Degradation of signal level, caused by transmission and distribution losses, is an important problem in integrated optoelectronics. While transmission loss can be reduced by minimizing waveguide length and/or by improving material quality, distribution loss is intrinsic to device design, as in the case of 1 x N splitters. Erbium-doped thin-film waveguides, suitable for monolithic integration with other guided-optic devices, are promising as loss-compensating devices for photonic integrated circuits and systems.; In this thesis, we have investigated the major challenges in developing Er-doped waveguide amplifiers: the requirement of higher Er concentrations, the development of a proper fabrication process for low-loss waveguides, and the limitations on the maximum-obtainable gain of Er-doped thin-film amplifiers. As a prototype example of photonic integrated circuits, we have developed Er-doped optical amplifiers that are monolithically integrated with 1 x 2 splitters. A novel fabrication process was developed and used in forming the Er-waveguide structure. The process does not require etching of an Er-doped film in defining the lateral dimension of a waveguide, but involves a collimated sputtering in conjunction with the use of a mesa-etched substrate or with a lift-off deposition process. A 2-cm-long amplifier shows a 1.54-μm signal enhancement of 12–14 dB with 980-nm pump power of 50 mW. This signal enhancement is sufficient to compensate for various losses (absorption, scattering, and coupling losses, and 1 x 2 splitter loss) of the amplifier/splitter module, thus resulting in zero insertion loss.; For applications to 1 x N splitters with larger N, it would be desirable to increase the waveguide length, thus increasing the maximum obtainable gain of optical amplifiers. This would require maximum coupling of pump power available from a laser diode chip. In this thesis we have proposed and developed a new pumping scheme that utilizes a flared-end waveguide structure in conjunction with a micro-optics for direct coupling of a diode laser beam onto a waveguide facet. Using this scheme, we have achieved a coupling efficiency of 20–40% with a maximum pump power coupling of ∼200 mW from a 1 Watt laser diode chip. This corresponds to 300–400% enhancement over the conventional end-coupling method, which involves using a single-mode-fiber pigtailed laser module. The Er-doped optical amplifiers with this new pumping scheme will be very useful for various photonic and integrated optoelectronic circuits/systems where distribution/propagation losses of optical signals need to be compensated.
机译:由传输和分配损耗引起的信号电平下降是集成光电中的一个重要问题。尽管可以通过最小化波导长度和/或改善材料质量来降低传输损耗,但对于1 x N分离器而言,分布损耗对于设备设计而言是固有的。适于与其他导光器件进行单片集成的掺薄膜波导有望作为光子集成电路和系统的损耗补偿器件。在本文中,我们研究了开发掺Er波导放大器的主要挑战:对更高Er浓度的要求,对低损耗波导合适的制造工艺的开发以及对Er-最大可获得增益的限制。掺杂的薄膜放大器。作为光子集成电路的原型示例,我们开发了掺有1 x 2分离器的掺Er光学放大器。开发了一种新颖的制造工艺并将其用于形成Er波导结构。该工艺在限定波导的横向尺寸时不需要蚀刻掺Er的膜,而是包括与台面蚀刻衬底的使用或剥离沉积工艺一起的准直溅射。一个2厘米长的放大器在50 mW的980 nm泵浦功率下显示1.54μm的信号增强了12–14 dB。该信号增强足以补偿放大器/分离器模块的各种损耗(吸收,散射和耦合损耗,以及1 x 2分离器损耗),从而导致零插入损耗。对于应用到具有更大N的1 x N分离器,需要增加波导长度,从而增加光放大器的最大可获得增益。这将需要从激光二极管芯片获得的泵浦功率的最大耦合。在本文中,我们提出并开发了一种新的泵浦方案,该方案利用了扩口波导结构和微光学器件,将二极管激光束直接耦合到波导小平面上。使用该方案,我们从1瓦激光二极管芯片获得的耦合效率为20–40%,最大泵浦功率耦合为〜200 mW。与传统的端耦合方法相比,这相当于300–400%的增强,传统的端耦合方法涉及使用单模光纤尾纤激光器模块。具有这种新的泵浦方案的掺Er的光放大器对于需要补偿光信号的分布/传播损耗的各种光子和集成光电电路/系统将非常有用。

著录项

  • 作者

    Lee, Byounghee.;

  • 作者单位

    University of Pittsburgh.;

  • 授予单位 University of Pittsburgh.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2000
  • 页码 252 p.
  • 总页数 252
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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