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Frequency-scalable bipolar RFIC front-end design with current-mode baseband filters.

机译:具有电流模式基带滤波器的可频率缩放的双极性RFIC前端设计。

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摘要

High-performance radios continue to stimulate the demand for more highly optimized RF circuits. While advances in semiconductor technology have enabled monolithic integration of RF circuitry, many RF circuit design techniques are based on ad-hoc practice, often resulting in non-optimum designs.; The minimum noise figure (NF) of a bipolar transistor has a global minima which depends solely on the collector current density, while the optimum source impedance is set by the device area. Therefore, obtaining minimum NF simultaneously with maximum power transfer is possible. The shallow nature of the global minima makes the NF insensitive to bias current variations, which is required for multi-mode designs. Furthermore, the optimum current density scales linearly with frequency while the optimum source impedance remains constant if the device area is scaled inversely with frequency. As a result, transforming the design from one frequency to another is achieved by simple circuit scaling. These theoretical results have been applied to low-noise amplifier (LNA) and active mixer designs, and verified by constructing a 1.8 GHz frequency-scaled SiGe bipolar test chip. The measured LNA NF is 1.3 dB, while the double-balanced mixer achieves a NF of 6.0 dB.; A new class of low-voltage current-mode programmable filters is well suited for highly integrated receivers because of their high dynamic-range. These filters operate from a supply voltage of 1.5 V while their compression point depends on the supply current. The cutoff frequency, ω0, depends on the product of two bias currents while the quality factor, Q, depends on the ratio, therefore, independent ω0- Q tuning is achieved. Two I/Q 1 MHz Bessel low-pass filters have been fabricated in a 0.8 μm CMOS process. These filters achieve a 1% total harmonic distortion dynamic-range of 81 dB and a NF of 9.3 dB, assuming a 1k Ω source. The measured in-band, input-referred second-order and third-order intercept points are +52.5 dBm and +30.5 dBm, respectively. Power consumption per pole is 0.9 mW.; A 1.5 GHz homodyne receiver, constructed from the elements above, achieves a NF of 1.2 dB, and a spurious-free dynamic range of 59 dB, which is limited by the front-end.
机译:高性能无线电继续刺激对更高度优化的RF电路的需求。尽管半导体技术的进步已经实现了RF电路的单片集成,但是许多RF电路设计技术是基于临时实践的,通常会导致非最佳设计。双极晶体管的最小噪声指数(NF)具有全局最小值,该最小值仅取决于集电极电流密度,而最佳源阻抗则由器件面积设置。因此,可以在获得最大功率传输的同时获得最小NF。全局最小值的浅层性质使NF对偏置电流的变化不敏感,这是多模式设计所必需的。此外,如果器件面积与频率成反比,则最佳电流密度与频率成线性比例,而最佳电源阻抗则保持恒定。结果,通过简单的电路定标就可以将设计从一个频率转换到另一频率。这些理论结果已应用于低噪声放大器(LNA)和有源混频器设计,并通过构建1.8 GHz频率缩放的SiGe双极测试芯片进行了验证。测得的LNA NF为1.3 dB,而双平衡混频器的NF为6.0 dB。新型的低压电流模式可编程滤波器因其高动态范围而非常适合于高度集成的接收器。这些滤波器的电源电压为1.5 V,而其压缩点取决于电源电流。截止频率ω 0 取决于两个偏置电流的乘积,而品质因数 Q 取决于比率,因此,独立的ω 0 < / sub>- Q 调整已实现。已经在0.8μmCMOS工艺中制造了两个I / Q 1 MHz贝塞尔低通滤波器。假设有1kΩ源,这些滤波器可实现81%的1%总谐波失真动态范围和9.3 dB的NF。带内,输入参考的二阶和三阶截点分别为+52.5 dBm和+30.5 dBm。每极功耗为0.9 mW。由上述元素构成的1.5 GHz零差接收器的NF为1.2 dB,无杂散动态范围为59 dB,这受前端的限制。

著录项

  • 作者

    Shana'a, Osama K.;

  • 作者单位

    Stanford University.;

  • 授予单位 Stanford University.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2001
  • 页码 131 p.
  • 总页数 131
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

  • 入库时间 2022-08-17 11:47:19

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