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High-speed optical interconnects for video memory.

机译:用于视频存储器的高速光学互连。

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摘要

The purpose of this work has been to design, model and experimentally verify a large fast-access memory array based on the use of GaAs charge-coupled devices and an optical fiber interconnection network for synchronous clocking of the CCDs. The large memory array was to consist of 16 levels of (planar) modules with 16 large GaAs CCD memory chips (2cm x 2cm) per plane. This memory needed to be synchronously clocked so that it could deliver two dimensional pattern arrays of 4096 x 4096 pixels in 256 colors for testing high-resolution monitors.; Since the CCDs to be used had already been fabricated and tested in previous work, the present work has focused on the design and implementation of the optical interconnect scheme because experimental information is lacking here which is essential for a complete verification of the large memory array design. This effort therefore included the design of an optical receiver to be fabricated in a buffered FET Logic (BFL) process because this matches the fabrication process used for the CCDs. Thus the results of this work and the previous CCD work would serve to finalize the verification of a complete MCM (multi-chip-module) memory before construction begins. Since MCM system are costly and time-consuming to produce it is essential to demonstrate a near-to-life simulation of the system beforehand.; An integrated MSM photodetector with MESFET transimpedance amplifier with gain control capability was designed to match the GaAs CCDs fabrication process and provides necessary speed of response and gain for the photonic interconnects purpose. The issues involved in the process of optical fiber coupling to laser and photodetector were studied and modeled. Finally, the photonic interconnect link were fabricated and characterized in terms of clock skew, loss and reliability.
机译:这项工作的目的是基于GaAs电荷耦合器件和用于CCD同步时钟的光纤互连网络的设计,建模和实验验证大型快速访问存储阵列。大型存储阵列由16个级别的(平面)模块组成,每个平面具有16个大型GaAs CCD存储芯片(2cm x 2cm)。该存储器需要同步时钟,以便可以提供256 x 4096 x 4096像素的二维图案阵列以测试高分辨率显示器。由于要使用的CCD已经在先前的工作中进行了制造和测试,因此本工作集中在光互连方案的设计和实现上,因为这里缺少实验信息,这对于完整验证大型存储阵列设计是必不可少的。因此,这项工作包括设计要以缓冲FET逻辑(BFL)工艺制造的光接收器,因为这与用于CCD的制造工艺相匹配。因此,这项工作和之前的CCD工作的结果将有助于在开始建造之前完成对完整MCM(多芯片模块)存储器的验证。由于MCM系统生产成本高昂且费时,因此必须事先演示该系统的接近生命的仿真。设计了具有增益控制能力的带MESFET跨阻放大器的集成MSM光电探测器,以匹配GaAs CCD的制造工艺,并为光子互连目的提供必要的响应速度和增益。研究和建模了光纤耦合到激光和光电探测器过程中的问题。最后,制造了光子互连链路,并根据时钟偏斜,损耗和可靠性进行了表征。

著录项

  • 作者

    Amin Hanjani, Amir H.;

  • 作者单位

    University of Cincinnati.;

  • 授予单位 University of Cincinnati.;
  • 学科 Engineering Electronics and Electrical.; Physics Optics.
  • 学位 Ph.D.
  • 年度 2001
  • 页码 423 p.
  • 总页数 423
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;光学;
  • 关键词

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