A low-voltage fully monolithic SSB transmitter IC for 5--6 GHz WLAN.

摘要

The subject of this thesis is the design and implementation of monolithic single-sideband (SSB) transmitter circuits for 5--6 GHz wireless local-area networks (WLANs). Experimental and simulation results for two fabricated circuits are reported: one in a 0.18 mum CMOS technology and another in SiGe BiCMOS. The CMOS circuit consists of a quadrature upconverter that incorporates a monolithic inductor to achieve low-voltage operation. Measured samples exhibit an upconversion gain of 12.5 dB, while dissipating 54 mW from the 1.8 V supply. In the SiGe BiCMOS design, the quadrature upconverter is augmented with an on-chip quadrature signal generator and transformer-coupled output stage to comprise a fully-monolithic SSB transmitter IC. Simulation results predict a 33.9 dB upconversion gain at an output power level of +3.9 dBm, while dissipating 30.8 mW from the 2.7 V supply. A novel on-chip quadrature phase-tuning circuit was integrated to improve upon the untuned sideband suppression of 37.2 dBc.