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Adhesion of polymer/inorganic interfaces: Effects of filler addition, environment and chemistry.

机译:聚合物/无机界面的粘合性:填料添加,环境和化学作用的影响。

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摘要

Miniaturization of microelectronic devices is increasingly limited by the ability to mechanically and electrically connect the chip to the substrate. Structures required for high-density packaging must be fabricated with layer thicknesses and feature sizes approaching micron size scales. Second phase inorganic particles are often added to the underfill epoxy that surrounds a ball grid array (BGA) to achieve the mechanical and thermal properties necessary to protect the electrical solder connections. These filler additions cause a variation in mechanical properties throughout the underfill layer and introduce a distribution of potentially weak interfaces, both of which can affect the behavior of the underfill/passivation interface and overall reliability of the package during thermal cycling of the device.; A fracture mechanics approach was used to study the adhesion of SiN x to two silica-filled model underfills based on either a cycloaliphatic or bisphenol F epoxy. The influence of filler content and distribution on critical adhesion and debond path selection was examined. As the filler content increased, the elastic particles constrained the plastic deformation in the epoxy, causing the critical adhesion of the underfill/SiNx interface to decrease. For the bisphenol F system, however, this embrittling effect was countered by weak adhesion between the epoxy matrix and the silica, resulting in microcrack toughening and higher interfacial adhesion values. At high filler contents, the dense concentration of microcracks directed the debond away from the interface and into the underfill layer.; Over the lifetime of the device, interfaces are susceptible to moisture-assisted debonding, progressive debond growth at loads well below the critical interface fracture energies. This effect is often seen for interface systems such as aliphatic/SiNx and is similar to the stress corrosion behavior observed for bulk glasses. The bisphenol F/SiNx interface surprisingly only exhibited subcritical debond growth at extremely low growth rates. This low growth rate behavior was examined with respect to variations in temperature and humidity as well as changes in the epoxy and interface chemistry. Potential mechanisms are proposed.
机译:将芯片机械地和电连接到衬底的能力越来越限制了微电子器件的小型化。高密度包装所需的结构必须以接近微米尺寸尺度的层厚度和特征尺寸来制造。通常将第二相无机颗粒添加到环绕球栅阵列(BGA)的底部填充环氧树脂中,以实现保护电焊点所需的机械和热性能。这些填充物的添加会导致整个底部填充层的机械性能发生变化,并引入潜在的弱界面分布,这两者都会影响底部填充/钝化界面的行为以及器件在热循环过程中封装的整体可靠性。使用断裂力学方法研究了SiN x 对两种基于脂环族或双酚F环氧树脂的二氧化硅填充模型底部填充胶的粘附性。研究了填料含量和分布对关键粘合力和脱粘路径选择的影响。随着填料含量的增加,弹性颗粒限制了环氧树脂中的塑性变形,从而导致底部填料/ SiN x 界面的临界粘合力降低。然而,对于双酚F体系,这种脆化效果被环氧基质与二氧化硅之间的弱粘合力抵消,从而导致微裂纹增韧和更高的界面粘合力值。在高填料含量下,密集的微裂纹使脱胶剂离开界面进入底部填料层。在设备的整个生命周期中,界面容易受到湿气辅助剥离的影响,在远低于临界界面断裂能的负载下逐渐进行剥离。这种作用在界面体系(例如脂族/ SiN x )中经常见到,类似于在大块玻璃中观察到的应力腐蚀行为。令人惊讶的是,双酚F / SiN x 界面仅在极低的生长速率下显示出亚临界脱键生长。针对温度和湿度的变化以及环氧树脂和界面化学的变化,研究了这种低增长率的行为。提出了潜在的机制。

著录项

  • 作者

    Wang, Lorraine Chia-Lei.;

  • 作者单位

    Stanford University.;

  • 授予单位 Stanford University.;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2003
  • 页码 131 p.
  • 总页数 131
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

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