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Studies of spin-polarized electrons in gallium arsenide-based quantum well LEDs.

机译:基于砷化镓的量子阱LED中自旋极化电子的研究。

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摘要

In this thesis spin injection of electrons from a spin polarizing contact into GaAs-based heterostructures is investigated. The structures known as “spin-LEDs”, consist of AlGaAs(n)/GaAs(i)/AlGaAs(p) quantum well light emitting diodes (LEDs) on top of which two different spin polarizing contact materials were grown.; The first material, a Zn1−xMnxSe(n) layer, is a paramagnetic diluted magnetic semiconductor (DMS). The second contact material, an Fe film, is a ferromagnetic metal. Spin polarized electrons are electrically injected into the GaAs quantum well from the AlGaAs(n) side while unpolarized holes are injected from the AlGaAs(p) barrier. The carriers recombine in the GaAs quantum well and emit photons through a variety of recombination channels. The confined free exciton ground state (e1h1) channel is used to determine the spin polarization of electrons from the degree of circular polarization of the emitted photons using the Wigner-Eckert theorem.; In ZnMnSe based spin-LEDs, ZnMnSe acts as a spin filter due to its large (several meV at modest magnetic fields) conduction band spin splitting which is well above kT at the temperature of our experiments (T = 4.5 K). As a consequence, practically all the electrons injected in the device are in their lowest (m s = −1/2) spin state and the emitted electroluminescence is circularly polarized predominantly as σ+. The maximum optical polarization achieved in these low temperature devices is 83% which corresponds to a high electron spin polarization of 92%.; In Fe spin-LEDs, spin injection is based on the unequal populations of spin up and spin down d electrons of Fe. The Fe contacts inject predominantly mj = −1/2 electrons as in the case of ZnMnSe, so that the excitonic emission exhibits a σ+ circular polarization. The differences of Fe with ZnMnSe-based spin-LEDs is that the maximum electron spin polarization achieved in the former is lower (59%) and that the spin injection itself persists at higher temperatures due to the high Curie temperature of Fe.
机译:在本文中,研究了自旋极化接触将电子自旋注入GaAs基异质结构。被称为“自旋LED”的结构由AlGaAs(n)/ GaAs(i)/ AlGaAs(p)量子阱发光二极管(LED)组成,在其上面生长了两种不同的自旋极化接触材料。第一种材料是Zn 1-x Mn x Se(n)层,是顺磁稀磁半导体(DMS)。第二接触材料是铁膜,是铁磁金属。自旋极化电子从AlGaAs(n)一侧电注入GaAs量子阱中,而非极化空穴则从AlGaAs(p)势垒注入。载流子在GaAs量子阱中重组,并通过各种重组通道发射光子。受限的自由激子基态(e 1 h 1 )通道用于使用Wigner-埃克特定理。在基于ZnMnSe的自旋LED中,ZnMnSe由于其大的导带自旋分裂(在我们的实验温度(T = 4.5 K)而远大于kT)而起自旋滤波器的作用。结果,实际上注入到器件中的所有电子都处于最低(m s = -1/2)自旋状态,并且发射的电致发光的圆极化主要为σ + 。在这些低温器件中实现的最大光偏振为83%,相当于92%的高电子自旋偏振。在Fe自旋LED中,自旋注入是基于Fe的自旋向上和向下旋转的d电子不相等的种群。与ZnMnSe一样,Fe接触主要注入m j = -1/2电子,因此激子发射呈现σ + 圆极化。 Fe与基于ZnMnSe的自旋LED的区别在于,前者实现的最大电子自旋极化较低(59%),并且由于Fe的居里温度高,自旋注入本身在较高的温度下仍然持续。

著录项

  • 作者

    Itskos, Grigorios.;

  • 作者单位

    State University of New York at Buffalo.;

  • 授予单位 State University of New York at Buffalo.;
  • 学科 Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 2003
  • 页码 157 p.
  • 总页数 157
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 O49;
  • 关键词

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