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Optical and Crystal Structure Characterizations of Nanowires for Infrared Applications.

机译:用于红外应用的纳米线的光学和晶体结构表征。

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摘要

Semiconductor nanowires (NWs) are one dimensional materials and have size quantization effect when the diameter is sufficiently small. They can serve as optical wave guides along the length direction and contain optically active gain at the same time. Due to these unique properties, NWs are now very promising and extensively studied for nanoscale optoelectronic applications. A systematic and comprehensive optical and microstructural study of several important infrared semiconductor NWs is presented in this thesis, which includes InAs, PbS, InGaAs, erbium chloride silicate and erbium silicate. Micro-photoluminescence (PL) and transmission electron microscope (TEM) were utilized in conjunction to characterize the optical and microstructure of these wires.;The focus of this thesis is on optical study of semiconductor NWs in the mid-infrared wavelengths. First, differently structured InAs NWs grown using various methods were characterized and compared. Three main PL peaks which are below, near and above InAs bandgap, respectively, were observed. The octadecylthiol self-assembled monolayer was employed to passivate the surface of InAs NWs to eliminate or reduce the effects of the surface states. The band-edge emission from wurtzite-structured NWs was completely recovered after passivation. The passivated NWs showed very good stability in air and under heat.;In the second part, mid-infrared optical study was conducted on PbS wires of subwavelength diameter and lasing was demonstrated under optical pumping. The PbS wires were grown on Si substrate using chemical vapor deposition and have a rock-salt cubic structure. Single-mode lasing at the wavelength of ∼3000--4000 nm was obtained from single as-grown PbS wire up to the temperature of 115 K.;PL characterization was also utilized to demonstrate the highest crystallinity of the vertical arrays of InP and InGaAs/InP composition-graded heterostructure NWs made by a top-down fabrication method. TEM-related measurements were performed to study the crystal structures and elemental compositions of the Er-compound core-shell NWs. The core-shell NWs consist of an orthorhombic-structured erbium chloride silicate shell and a cubic-structured silicon core. These NWs provide unique Si-compatible materials with emission at 1530 nm for optical communications and solid state lasers.
机译:半导体纳米线(NWs)是一维材料,当直径足够小时,具有尺寸量化作用。它们可以用作沿长度方向的光波导,并同时包含光学有效增益。由于这些独特的性能,NW现在非常有前途,并且已经在纳米级光电应用中进行了广泛的研究。本文对InAs,PbS,InGaAs,氯化硅和硅酸等几种重要的红外半导体纳米线进行了系统,全面的光学和微观结构研究。结合微光致发光(PL)和透射电子显微镜(TEM)来表征这些导线的光学和微观结构。本论文的重点是对半导体NW在中红外波长的光学研究。首先,对使用各种方法生长的不同结构的InAs NW进行了表征和比较。观察到分别在InAs带隙以下,附近和之上的三个主要PL峰。十八烷基硫醇自组装单层被用来钝化InAs NW的表面,以消除或减少表面态的影响。钝化后,纤锌矿结构的NW的带边发射被完全恢复。钝化的NWs在空气和热源中表现出非常好的稳定性。第二部分,对亚波长直径的PbS导线进行了中红外光学研究,并在光泵浦下证明了激光发射。使用化学气相沉积法将PbS线生长在Si衬底上,并具有岩石盐立方结构。从单根生长的PbS焊丝获得最高波长115 K的波长在〜3000--4000 nm的单模激光; PL表征还用于证明InP和InGaAs垂直阵列的最高结晶度通过自上而下的制造方法制备的/ InP组成渐变的异质结构NW。进行了与TEM相关的测量,以研究Er复合核壳NW的晶体结构和元素组成。核-壳NW由正交结构的氯化er硅酸盐壳和立方结构的硅核组成。这些NW提供独特的与Si兼容的材料,可在1530 nm处发射光,用于光学通信和固态激光器。

著录项

  • 作者

    Sun, Minghua.;

  • 作者单位

    Arizona State University.;

  • 授予单位 Arizona State University.;
  • 学科 Nanotechnology.;Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2011
  • 页码 157 p.
  • 总页数 157
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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