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Reaction Dynamics of Alkyl Bromides at Silicon; Experiment and Theory.

机译:烷基溴在硅上的反应动力学;实验与理论。

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摘要

Physisorption and reaction at silicon surfaces of a series of brominated organic molecules: bromoethane, 1,2-dibromoethane, 1-bromopropane, 1-bromobutane and 1-bromopentane were examined by Scanning Tunneling Microscopy (STM).;On Si(111)-7x7, a widely-spaced "one-per-corner-hole" pattern was observed, formed by the physisorption and reaction of several alkyl bromides. This "one-per-corner-hole" pattern suggested long-range repulsion between the adsorbates. Density Functional Theory (DFT) calculations, performed by others in parallel with these experiments, showed that this long-range repulsion was due to lateral charge transfer in the Si(111)-7x7 surface consequent on the physisorption of an alkyl bromide or chemisorption of a Br atom.;The reaction rate of bromine "abstraction" (transfer of a Br-atom from the adsorbate to the silicon) was examined for two physisorbed states of 1 bromopentane on Si(111)-7x7, one vertical and one horizontal, each distinguishable by STM. The energy barrier was found to be significantly lower for abstraction of Br-atom from the vertical than for the horizontal 1 bromopentane, both for thermal and electron-induced reaction. This finding accords with previous DFT calculations for methyl bromide, for which theory exhibited a clear preference for a vertical transition state in the bromination of Si(111)-7x7.;The effect of alkyl chain-length on the rate of thermally-induced dissociative attachment reactions was investigated for a series of primary bromo-alkanes (bromoethane, 1-bromopropane and 1-bromobutane) on a different face of silicon; Si(100)-c(4x2). These three bromo-alkanes all physisorbed exclusively "inter-row", bridging the gap between Si dimer-rows of Si(100)-c(4x2). Thermal reaction was highly "localized", i.e. the chemisorbed Br-atom was formed directly below the parent bromo-alkane. The thermal barrier heights were found experimentally to increase systematically with chain length. This trend was interpreted, on the basis of DFT calculations performed by the author, as being due to the extra energy required to lift the alkyl group in going from the initial physisorbed state to the more-nearly vertical transition state.
机译:通过扫描隧道显微镜(STM)检查了一系列溴化有机分子:溴乙烷,1,2-二溴乙烷,1-溴丙烷,1-溴丁烷和1-溴戊烷在硅表面的物理吸附和反应。在Si(111)-上在7×7的情况下,观察到由几个烷基溴的物理吸附和反应形成的宽间隔的“每个角孔一个”的图案。这种“每个角孔一个”的模式表明了被吸附物之间的远距离排斥。其他人与这些实验并行进行的密度泛函理论(DFT)计算表明,这种长程排斥是由于烷基溴化物的物理吸附或化学吸附引起的Si(111)-7x7表面的侧向电荷转移。在1种溴戊烷在Si(111)-7x7上的两种物理吸附状态下(垂直和水平),研究了溴的“吸收”(溴原子从被吸附物转移到硅上)的反应速率,每个都可以通过STM区分。对于热和电子诱导的反应,发现从垂直方向提取溴原子的能垒比水平1溴戊烷的能垒低得多。这一发现与以前对甲基溴的DFT计算相符,因为该理论对Si(111)-7x7的溴化反应表现出明显的垂直过渡态的明显偏爱。烷基链长对热诱导解离速率的影响研究了在硅的不同表面上一系列伯溴代烷烃(溴乙烷,1-溴丙烷和1-溴丁烷)的附着反应; Si(100)-c(4x2)。这三个溴代烷烃都仅在“行间”物理吸附,从而弥合了Si(100)-c(4x2)的Si二聚体行之间的间隙。热反应高度“局部化”,即化学吸附的Br原子直接在母体溴烷烃下方形成。实验发现热障高度随着链长的增加而系统地增加。根据作者进行的DFT计算,将这种趋势解释为是由于将烷基从初始的物理吸附状态转变为更接近垂直的过渡状态时需要额外的能量。

著录项

  • 作者

    Huang, Kai.;

  • 作者单位

    University of Toronto (Canada).;

  • 授予单位 University of Toronto (Canada).;
  • 学科 Chemistry Organic.;Chemistry Physical.
  • 学位 Ph.D.
  • 年度 2011
  • 页码 114 p.
  • 总页数 114
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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