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Quadrature Down-converter for Wireless Communications.

机译:用于无线通信的正交下变频器。

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摘要

Future generation of wireless systems will feature high data rates and be implemented in low voltage CMOS technologies. Direct conversion receivers (DCRs) will be used in such systems which will require low voltage RF front-ends with adequate linearity. The down-converter in a DCR is a critical block in determining linearity. In addition to detailed DCR modeling in MATLAB, this thesis, completed in 2005, deals with the design and characterization of a 1V, 8GHz quadrature down-converter. It consists of two mixers and a quadrature generator implemented in a 0.18µm CMOS technology.;The mixer architecture proposed in this work uses a new trans-conductor. It simultaneously satisfies the low voltage and high linearity requirements. It also relaxes the inherent trade-off between gain and linearity governing CMOS active mixers. The implemented mixer occupies an area of 320 x 400 µm 2 and exhibits a power conversion gain of +6.5dB, a P-1dB of -5.5dBm, an IIP3 of +3.5dBm, an IIP2 of better than +48dBm, a noise figure of 11.5dB, an LO to RF isolation of 60dB at 8GHz and consumes 6.9mW of power from a 1V supply.;The proposed quadrature generator circuit features a new architecture which embeds the quadrature generation scheme into the LO-buffer using active inductors. The circuit offers easy tune-ability for process, supply and temperature variations by relaxing the coupling between amplitude and phase tuning of the outputs. The implemented circuit occupies an area of 150 x 90µm 2 and exhibits an amplitude and quadrature phase accuracy of 1 dB and 1.5° respectively over a bandwidth of 100 MHz with a power consumption of 12mW from a 1V supply including the LO-buffer.;The quadrature down-converter features an image rejection ratio of better than 40 dB and satisfies the potential target specifications of future mobile phones, extracted in this work.
机译:下一代无线系统将以高数据速率为特征,并以低压CMOS技术实现。直接转换接收器(DCR)将用于此类系统,这些系统需要具有足够线性度的低压RF前端。 DCR中的下变频器是确定线性度的关键模块。除了在MATLAB中进行详细的DCR建模外,本论文于2005年完成,主要研究1V,8GHz正交下变频器的设计和特性。它由两个混频器和一个采用0.18µm CMOS技术实现的正交发生器组成。;这项工作中提出的混频器架构使用了一种新型跨导器。同时满足低压和高线性度要求。它还放松了增益和线性度控制CMOS有源混频器之间固有的权衡。实施的混频器占地320 x 400 µm 2,功率转换增益为+ 6.5dB,P-1dB为-5.5dBm,IIP3为+ 3.5dBm,IIP2优于+ 48dBm,噪声系数11.5dB的噪声,在8GHz时LO至RF的隔离度为60dB,并在1V电源下消耗6.9mW的功率。拟议的正交发生器电路采用了一种新架构,该架构使用有源电感将正交生成方案嵌入到LO缓冲器中。该电路通过放宽输出的幅度和相位调整之间的耦合,为过程,电源和温度变化提供易于调节的能力。所实现的电路占地150 x90μm2,在100 MHz带宽上的振幅和正交相位精度分别为1 dB和1.5°,从包括LO缓冲器的1V电源获得的功耗为12mW。正交下变频器具有优于40 dB的镜像抑制比,并且满足了这项工作中提取的未来手机的潜在目标规格。

著录项

  • 作者

    Mahmoudi, Farsheed.;

  • 作者单位

    University of Toronto (Canada).;

  • 授予单位 University of Toronto (Canada).;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2012
  • 页码 148 p.
  • 总页数 148
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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