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Gain and loss measurements in gallium antimonide-based mid-infrared lasers.

机译:基于锑化镓的中红外激光器的增益和损耗测量。

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摘要

Considerable research effort over many years has extended the operating range of semiconductor lasers toward longer wavelengths and higher operating temperatures. Key to progress in this endeavor is a clear understanding of the optical gain and loss mechanisms and their dependence on device temperature. This work reports on gain and loss measurements made on a variety of mid-infrared GaSb-based laser samples emitting in the 2 to 4 mum range, including electrically pumped type-I lasers and three different interband type-II lasers: electrically pumped 'W' lasers, electrically pumped interband cascade lasers, and optically pumped 'W' lasers.; These type-II lasers can not currently operate in continuous wave mode at room temperature, a critical requirement for many practical applications. High temperature lasing is limited either by a decrease of maximum gain with temperature or an increase in optical loss with temperature. The experimental results described in this work indicate that gain is the limiting factor on the high temperature performance of these interband type-II lasers; the gain was found to decrease rapidly with increasing temperature, while the losses increased more slowly. This result, combined with indications that Auger recombination plays a larger than previously thought role opens up new opportunities for designing type-II lasers with superior high temperature performance.; Wide range tunability is another frontier for semiconductor lasers. The type-I lasers employed in this study employed relatively wide quantum wells, with consequently small energy steps between quantized levels. When these lasers were cleaved in to short cavity lasers with consequently high mirror losses, we observed an extremely broad and flat optical gain spectrum. These lasers are well suited for use in widely tunable external cavity laser systems.; Measurements were made using the well established Hakki-Paoli technique, and also using a newly adapted single pass technique for the optically pumped samples. The measurement of such a diverse collection of samples facilitates direct comparisons of the trade-offs associated with the different laser designs.
机译:多年来的大量研究工作已将半导体激光器的工作范围扩展到更长的波长和更高的工作温度。这项工作取得进展的关键是对光学增益和损耗机制及其对器件温度的依赖性的清楚理解。这项工作报告了在2至4微米范围内发射的各种基于中红外GaSb的激光样品上进行的增益和损耗测量,包括电泵I型激光器和三种不同的带间II型激光器:电泵'W激光器,电泵浦带间级联激光器和光泵浦“ W”激光器。这些II型激光器目前无法在室温下以连续波模式运行,这是许多实际应用的关键要求。高温激光通过最大增益随温度的降低或光学损耗随温度的升高而受到限制。这项工作中描述的实验结果表明,增益是这些II型带间激光器的高温性能的限制因素。发现增益随着温度的升高而迅速降低,而损耗的升高则更为缓慢。这一结果,再加上俄歇复合作用比以前认为的更大的迹象,为设计具有优异高温性能的II型激光器提供了新的机会。宽范围可调谐性是半导体激光器的另一个前沿领域。本研究中使用的I型激光器使用了相对较宽的量子阱,因此在量子化能级之间具有较小的能级。当将这些激光切割成具有高反射镜损耗的短腔激光时,我们观察到了极为宽广且平坦的光学增益谱。这些激光器非常适合用于可广泛调谐的外腔激光器系统。使用完善的Hakki-Paoli技术进行测量,还使用新改编的单次通过技术对光泵浦样品进行测量。这样多样化的样本集合的测量有助于直接比较与不同激光器设计相关的权衡。

著录项

  • 作者

    Westerfeld, David.;

  • 作者单位

    State University of New York at Stony Brook.;

  • 授予单位 State University of New York at Stony Brook.;
  • 学科 Engineering Electronics and Electrical.; Physics Optics.
  • 学位 Ph.D.
  • 年度 2005
  • 页码 145 p.
  • 总页数 145
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;光学;
  • 关键词

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