首页> 外文学位 >Electrochemistry and electrogenerated chemiluminescence of semiconductor nanoparticles.
【24h】

Electrochemistry and electrogenerated chemiluminescence of semiconductor nanoparticles.

机译:半导体纳米粒子的电化学和电化学发光。

获取原文
获取原文并翻译 | 示例

摘要

Electrochemical band gaps from semiconductor nanoparticles (NPs) such as CdSe and CdTe showed a size-confinement effect, and the values were in good agreement with the optical band gaps. For example, differential pulse voltammetry of 2.8 nm and 3.5 nm CdSe NPs showed electrochemical band gaps of 2.41 and 2.17 eV from the peak-to-peak separations. A large anodic wave from both CdSe and CdTe NPs was explained by the electrochemical oxidation of the particle surface of trioctylphosphine (TOP)-Se and TOP-Te species.; Electrogenerated chemiluminescence (ECL)-potential curves also showed unique electronic properties of NPs. In general, ECL of NPs was sensitive to surface energy states. In the case of CdSe NPs, ECL onsets at positive potentials were suggested to result from electron transfer at hole traps in the NPs. The 2.0, 3.0, and 4.8 nm CdSe NPs showed size-dependent ECL behavior. The smallest particle, 2.0 nm, showed that most of the ECL signal came from the surface states, and surface state-ECL was observed at a wavelength that was red-shifted 200 nm from the band edge position. The ratio of surface state to band edge-ECL intensity was lower for larger particles and for densely-packed NP films. The surface state-ECL was negligible at red-emitting CdSe and CdTe NPs due to changes in the luminescent surface states during the growth of the particles. Red-emitting Si NPs also showed ECL in good agreement with the photoluminescence (PL).; CdSe/ZnSe core/shell NPs and oxygen-treated CdSe NPs showed a similar enhancement of PL intensity through the surface treatment. However, in the ECL measurements, oxygen treatment of the NPs decreased the surface state-ECL intensity with almost no change in the band edge-ECL, whereas the CdSe/ZnSe core/shell system increased the intensity of band edge-ECL. The ZnSe shell, with its wider band gap, can facilitate electron transfer from the surface energy states to the core of particle, which can not be expected in the oxygen-treated particle. ECL studies of the surface modified NPs demonstrate that ECL is an effective way to investigate the surface states of NPs.
机译:CdSe和CdTe等半导体纳米粒子(NPs)的电化学带隙显示出尺寸限制效应,其值与光学带隙一致。例如,2.8 nm和3.5 nm CdSe NPs的差分脉冲伏安法显示峰峰分离的电化学带隙为2.41和2.17 eV。 CdSe和CdTe NPs都产生了大的阳极波,这是由三辛基膦(TOP)-Se和TOP-Te物种的颗粒表面的电化学氧化所解释的。电产生的化学发光(ECL)-电位曲线也显示出NPs的独特电子性质。通常,NPs的ECL对表面能态敏感。在CdSe NP的情况下,正电位的ECL发生被认为是由NP中空穴陷阱处的电子转移引起的。 2.0、3.0和4.8 nm CdSe NPs表现出尺寸依赖性ECL行为。最小的粒子为2.0 nm,表明大多数ECL信号来自表面状态,并且在从带边缘位置移出200 nm的波长处观察到表面状态ECL。对于较大的颗粒和紧密堆积的NP膜,表面状态与带边缘ECL强度的比率较低。由于在颗粒生长过程中发光表面状态的变化,在发射红色CdSe和CdTe NP时,表面状态ECL可以忽略不计。发出红色光的Si NPs的ECL也与光致发光(PL)一致。通过表面处理,CdSe / ZnSe核/壳纳米粒子和经氧处理的CdSe纳米粒子表现出相似的PL强度增强。然而,在ECL测量中,NPs的氧处理降低了表面状态ECL强度,但带边缘ECL几乎没有变化,而CdSe / ZnSe核/壳系统增加了带边缘ECL的强度。具有较宽的带隙的ZnSe壳层可以促进电子从表面能态转移到粒子的核,这在氧处理过的粒子中是无法预期的。对表面修饰的NP进行ECL研究表明,ECL是研究NPs表面状态的有效方法。

著录项

  • 作者

    Bae, Yoonjung.;

  • 作者单位

    The University of Texas at Austin.;

  • 授予单位 The University of Texas at Austin.;
  • 学科 Chemistry Analytical.
  • 学位 Ph.D.
  • 年度 2005
  • 页码 209 p.
  • 总页数 209
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号