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Modeling and signal analysis of semiconducting B(5)C neutron detectors.

机译:半导体B(5)C中子探测器的建模和信号分析。

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摘要

Neutron detectors are needed for a myriad of applications ranging from military uses to power generation monitors to medical radiation therapy. Recently, a class of semiconducting boron carbide (B5C)/silicon heterojunction diodes were demonstrated to detect thermal neutrons.[1] The B5C-based devices have advantageous features of requiring low operating voltage, low power, are robust and extremely thin while maintaining detection efficiency.;A simple model was developed for the analysis of the neutron capture output spectrum from the detectors, which allowed the comparison of several differing styles of planar geometry detectors. The model was also utilized to obtain the functional dependence of the device efficiencies, capture product spectral features, and the capture product energy deposition on capture layer thickness. An all-B5C device construction was determined by the model to be the most efficient form of a B5C-based detector, which reaches nearly 100% detection efficiency with a low probability of false positives. This model showed agreement with output from a full-physics simulation package, GEANT4, and experimental neutron detection spectra from a B5C/Si device.;The signals generated in a B5C/Si heterojunction diode during neutron and alpha particle detection experiments were analyzed through fitting of the output current pulses and through capture output spectra. The output current pulse analysis confirmed charge generation and collection from both materials in the diode and demonstrated the suitability of the B5C material for use in an all-semiconducting B5C neutron detector. The experimental output spectra were analyzed and determined to be lower in detected capture product energy than expected, but retained the spectral features that allowed analysis of the detection results.;The development of the model and the results from the particle detection experiments show great promise for the future development of B5C neutron detectors.;[1]B. W. Robertson, S. Adenwalla, A. Harken, P. Welsch, J. I. Brand, P. A. Dowben, and J. P. Claassen, "A class of boron-rich solid-state neutron detectors," Applied Physics Letters, vol. 80, pp. 3644-46, 2002.
机译:从军事用途到发电监视器再到医学放射治疗,无数种应用都需要中子探测器。最近,一类半导体碳化硼(B5C)/硅异质结二极管被证明可检测热中子。[1]基于B5C的设备具有以下优点:需要低工作电压,低功率,坚固且非常薄,同时又保持了检测效率。;开发了一个简单的模型来分析探测器的中子捕获输出光谱,从而可以进行比较几种不同样式的平面几何检测器。该模型还用于获得器件效率的功能依赖性,捕获产物的光谱特征以及捕获层厚度上的捕获产物能量沉积。该模型将全B5C设备构造确定为基于B5C的检测器的最有效形式,该检测器可达到近100%的检测效率,且误报率较低。该模型与全物理模拟程序包GEANT4的输出以及B5C / Si装置的实验中子检测光谱显示出一致性。;通过拟合分析了B5C / Si异质结二极管在中子和α粒子检测实验中产生的信号输出电流脉冲并通过捕获输出频谱。输出电流脉冲分析证实了二极管中两种材料均会产生电荷并收集电荷,并证明了B5C材料适用于全半导体B5C中子探测器。分析并确定了实验的输出光谱,其检测到的捕获产物能量低于预期,但保留了可对检测结果进行分析的光谱特征。;模型的开发和粒子检测实验的结果显示出了广阔的前景B5C中子探测器的未来发展。[1] B。 W. Robertson,S。Adenwalla,A。Harken,P。Welsch,J。I. Brand,P。A. Dowben和J. P. Claassen,“一类富含硼的固态中子探测器”,《应用物理快报》,第1卷,第1期。 80,pp.3644-46,2002。

著录项

  • 作者

    Harken, Andrew D.;

  • 作者单位

    The University of Nebraska - Lincoln.;

  • 授予单位 The University of Nebraska - Lincoln.;
  • 学科 Materials science.
  • 学位 Ph.D.
  • 年度 2006
  • 页码 138 p.
  • 总页数 138
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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