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Synthesis of single walled carbon nanotubes from a novel polymer based catalyst for applications in device fabrication.

机译:由新颖的基于聚合物的催化剂合成单壁碳纳米管,用于器件制造。

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The goal of this work was to develop an industrially viable fabrication of single walled carbon nanotube (SWNT) devices which could potentially replace the present silicon technology. Thus, I have focused on three major areas of SWNT development, namely: (1) the controlled synthesis of well dispersed, highly uniform, low defect bundles; (2) the direct fabrication of SW-NT field effect transistors (FETs) from such organized nanotube growth; (3) the investigation of chemical sensitivity by modification of the SWNT FETs through incorporation of receptors. By taking advantage of the natural microphase separation characteristic of asymmetric block copolymers, we employed a ferrocene based block copolymer to uniformly disperse iron nano-domains that in turn result in the highly dispersed growth of SWNTs at controlled density and bundle diameter. The SWNT yield and disentangled nature allowed for the fabrication of over 160 SWNT transistors on a single 15 mm x 15 mm silicon chip without previously mapping the nanotube location on the sample. Each device contained over 300 nanotube channels in parallel. These devices show high current output while maintaining high surface area exposed to environmental conditions, and are thus excellent candidates as tiny, reliable, cost effective sensors. The SWNT FET chemical sensitivity was analyzed through the adsorption of an aniline oligomer in both its conductive and insulating states. We found that the oligomer successfully bound to the SWNT sidewalls and that the electrically conductive form could modulate SWNT channel conductance by charge transfer whereby all n-type current flow carried through semiconducting nanotubes was inhibited. The FET response to aniline adsorption provides key insight into the sensitivity of the nanotubes and their future application as electrical interconnects in nano-chemical sensors.
机译:这项工作的目标是开发一种工业上可行的单壁碳纳米管(SWNT)器件制造方法,该器件有可能替代当前的硅技术。因此,我专注于SWNT开发的三个主要领域,即:(1)良好分散,高度均匀,低缺陷束的受控合成; (2)通过这种有组织的纳米管生长直接制造SW-NT场效应晶体管(FET); (3)通过结合受体修饰SWNT FET来研究化学敏感性。通过利用不对称嵌段共聚物的天然微相分离特性,我们使用了基于二茂铁的嵌段共聚物来均匀分散铁纳米域,从而导致SWNT在受控的密度和束直径下高度分散地生长。 SWNT的产量和解缠结的性质允许在单个15 mm x 15 mm的硅芯片上制造160多个SWNT晶体管,而无需事先在样品上绘制纳米管位置。每个设备并行包含300多个纳米管通道。这些器件在保持暴露于环境条件下的高表面积的同时显示出高电流输出,因此,它们是纤巧,可靠且具有成本效益的传感器的极佳选择。通过在导电和绝缘状态下吸附苯胺低聚物来分析SWNT FET的化学敏感性。我们发现低聚物成功地结合到SWNT侧壁,并且导电形式可以通过电荷转移调节SWNT通道电导,从而抑制了通过半导体纳米管携带的所有n型电流。 FET对苯胺吸附的响应提供了对纳米管灵敏度及其在纳米化学传感器中作为电互连的未来应用的关键见解。

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