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Metalorganic chemical vapor deposition of aluminum from methylpyrrolidine alane complex.

机译:从甲基吡咯烷铝烷络合物中铝的金属有机化学气相沉积。

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摘要

The low pressure chemical vapor deposition (CVD) of Al metal using a recently developed metalorganic precursor, methylpyrrolidine alane (MPA) complex, has been studied. Al films were deposited by thermal and laser assisted processes and characterized by various surface analytical techniques. The growth of Al films is strongly dependent on the nature of the substrate surface, showing deposition selectivity. In general, Al films deposit easily on metallic substrates such as TiN and Cu, but not on semiconducting and dielectric substrates such as Si and SiO2. The film growth typically follows a 3-D nucleation mode. The discrete Al islands form on the substrate initially and then coalesce to produce continuously Al films. It is believed that the deposition selectivity is closely related to the wettability and reactivity of the substrate. The metal substrates can lower the nucleation barrier and catalyze the deposition reaction. The growth of Al films on transition metal oxides suggests that the oxidation-reduction reaction between the precursor and the substrate occurs on the surface. Al deposition on metallic surfaces starts at ∼100°C and the growth rate increases with the substrate temperature. Above ∼180°C, the growth rate saturates at about 90-100 nm/min and even decreases with temperature due to the dissociation of precursor in the gas phase. Al films deposited on TiN are carbon-free and do not have preferred orientations. The surface roughness of films increases as the deposition proceeds. The laser deposition of Al is likely a hybrid of the pyrolytic and photolytic processes. The film growth and microstructure are strongly dependent on the laser power and irradiation time. The deposition rate increases linearly with the laser power and ranges 0.2-1.3 mum/min within experimental conditions. The laser deposition rate is much higher than that of a thermal CVD process. The Al dot grows in thickness as well as in diameter during the laser irradiation. The surface roughness increases rapidly during deposition and the grain size reaches 1-2 mum.
机译:已经研究了使用最近开发的金属有机前驱物甲基吡咯烷铝烷(MPA)络合物对Al金属进行低压化学气相沉积(CVD)。通过热和激光辅助工艺沉积铝膜,并通过各种表面分析技术对其进行表征。 Al膜的生长在很大程度上取决于基底表面的性质,显示出沉积选择性。通常,Al膜很容易沉积在金属衬底(例如TiN和Cu)上,但不容易沉积在半导体和介电衬底(例如Si和SiO2)上。膜的生长通常遵循3-D成核模式。离散的Al岛最初在基板上形成,然后聚结以连续产生Al膜。据信沉积选择性与基材的润湿性和反应性密切相关。金属基底可以降低成核屏障并催化沉积反应。 Al膜在过渡金属氧化物上的生长表明在前体和基底之间的氧化还原反应发生在表面上。金属表面上的Al沉积始于〜100°C,并且生长速率随衬底温度的升高而增加。在〜180°C以上,由于气相中前体的解离,生长速率在约90-100 nm / min时达到饱和,甚至随温度降低。沉积在TiN上的Al薄膜不含碳,并且没有优选的取向。膜的表面粗糙度随着沉积的进行而增加。 Al的激光沉积可能是热解和光解过程的混合。膜的生长和微观结构在很大程度上取决于激光功率和照射时间。在实验条件下,沉积速率随激光功率线性增加,范围为0.2-1.3 mum / min。激光沉积速率远高于热CVD工艺。在激光照射过程中,Al点的厚度和直径都会增加。在沉积过程中,表面粗糙度迅速增加,晶粒尺寸达到1-2微米。

著录项

  • 作者

    Liu, Yonghua.;

  • 作者单位

    The University of Texas at Dallas.;

  • 授予单位 The University of Texas at Dallas.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2006
  • 页码 111 p.
  • 总页数 111
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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