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Synergistic experimental and theoretical approach to atomic-level surface and interface science.

机译:原子级表面和界面科学的协同实验和理论方法。

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Two different areas of surface science topics have been studied using a synergistic combination of experiment and theory, which provides for both explanation and clarification of experimental results, as well as prediction for future experiments. Low coverage oxidation Ge(100) was studied using scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and DFT modeling of bonding and electronic structures. 100 L O2 exposure was found to pin the Fermi level near the valence band due to a strong coverage effect, with theoretical findings consistent with experimental observations. The passivation of Ge(100) surface using molecular silicon monoxide (SiO) was studied using STM, STS, and DFT modeling of bonding and electronic structures. The adsorbed SiO was found to form trimer, (SiO)3, trough-bridging pyramids that did not pin the Fermi level. Ordered molecular metal oxide (ZrO 2 and HfO2) adsorbate interfaces on Ge(100) were studied using DFT modeling of bonding and electronic structures. Metal-down and oxygen-down structures were found to be energetically degenerate, with metal-down structures forming metallic interface and oxygen-down structures forming passive interfaces. Calculated density of states minima shifts were attributed to possible band bending extending beyond the depth of the computational Ge slabs. The gas-surface dynamics and etching by low-coverage Cl2 on Al(111) was studied using time-of-flight mass spectrometry, King-and-Wells sticking measurements, and density functional theory (DFT) modeling. Hyperthermal desorption of AlCl 3 was documented and attributed to fast-time-scale surface diffusion and agglomeration of adsorbed Cl to form aluminum chlorides with activated chemisorption states having potential energies above the vacuum level.
机译:使用实验和理论的协同组合研究了表面科学主题的两个不同领域,这为实验结果的解释和澄清以及对未来实验的预测提供了依据。使用扫描隧道显微镜(STM),扫描隧道光谱(STS)以及键合和电子结构的DFT建模研究了低覆盖氧化Ge(100)。由于强覆盖作用,发现100 L O2暴露将费米能级固定在价带附近,理论发现与实验观察一致。使用STM,STS和键合和电子结构的DFT建模研究了使用分子一氧化硅(SiO)对Ge(100)表面进行的钝化。发现被吸附的SiO形成了三聚体(SiO)3,谷形桥金字塔没有固定费米能级。使用键和电子结构的DFT模型研究了Ge(100)上的有序分子金属氧化物(ZrO 2和HfO2)吸附物界面。发现金属向下和氧下降结构在能量上退化,其中金属向下结构形成金属界面,而氧下降结构形成被动界面。计算出的状态最小位移密度归因于可能的能带弯曲,其延伸超出了计算Ge板的深度。利用飞行时间质谱,King-and-Wells黏附测量和密度泛函理论(DFT)建模研究了Al(111)上低覆盖Cl2的气体表面动力学和蚀刻。记录了AlCl 3的超高温解吸,这归因于快速时标的表面扩散和被吸附的Cl的团聚,形成具有激活的化学吸附态的氯化铝,其势能高于真空能级。

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