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Optimization of plasma dispersion modulators in silicon-on-insulator.

机译:绝缘体上硅中等离子体弥散调制器的优化。

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摘要

This thesis presents an investigation of the causes of and design factors affecting power consumption within SOI-based plasma dispersion optoelectronic devices. We also consider the issue of thermal buildup, one of the few such investigations ever performed. We examine the effects of several novel design improvements upon three prototypical devices: a Mach-Zehnder interferometer (MZI), an electroabsorption modulator and a 2 x 2 GMZI switch.;Measurements of twenty-six fabricated Mach-Zehnder interferometers showed a typical operating current of 35 mA and attenuation of 8 dB with a bandwidth of ∼1 MHz. Comparison of the various fabricated devices confirms at a statistically meaninful level that the design modifications improve modulator performance. Numerical simulation, inferences from optical measurements and direct thermal imaging cap the maximum rise in operating temperature of the devices at 0.02 K. Performance of the electroabsorption modulators were found to be lower because of the increased injected carrier density required for operation. A maximum attenuation of 13 dB at a current of 50 mA was recorded.;Fabrication difficulties led to 2 x 2 GMZI switches that functioned through thermal rather than electrical processes. Average extinction ratios and crosstalks were measured to be 5.6 dB and 3 dB, respectively. Switching power was measured to be as low as 180 mW, one of the best reported for an SOI-based switch.;We find that both power consumption and thermal buildup within plasma dispersion devices is dominated by carrier recombination within the heavily doped emitter contacts. Numerical simulations indicate that this contribution can be reduced by an order of magnitude through the use of heavily doped polysilicon emitters. A further order of magnitude improvement is possible through the use of a novel "pinhole" contact structure, which replaces the traditional strip contact architecture used in all previously reported optoelectronic devices.
机译:本文对影响基于SOI的等离子体色散光电器件中功耗的原因和设计因素进行了研究。我们还考虑了热积累问题,这是有史以来进行的少数此类研究之一。我们研究了几种新颖的设计改进对三种原型设备的影响:一个Mach-Zehnder干涉仪(MZI),一个电吸收调制器和一个2 x 2 GMZI开关;;对26个制造的Mach-Zehnder干涉仪的测量显示了典型的工作电流35 mA的衰减和8 dB的衰减,带宽约为1 MHz。各种制造设备的比较在统计学上有意义的水平上确认了设计修改可改善调制器性能。数值模拟,光学测量和直接热成像得出的结论限制了器件工作温度在0.02 K时的最大上升。由于操作所需注入的载流子密度增加,电吸收调制器的性能较低。记录了在50 mA电流下的最大衰减13 dB。制造困难导致2 x 2 GMZI开关通过热过程而不是电气过程起作用。测得的平均消光比和串扰分别为5.6 dB和3 dB。开关功率测得低至180 mW,这是基于SOI的开关的最佳报告之一。;我们发现,等离子体分散器件内的功耗和热量积聚都受到重掺杂发射极触点内载流子复合的支配。数值模拟表明,通过使用重掺杂的多晶硅发射极,可以将这一贡献降低一个数量级。通过使用新颖的“针孔”接触结构,可以进一步改善一个数量级,该结构取代了所有先前报道的光电设备中使用的传统带状接触结构。

著录项

  • 作者

    Waldron, Philip.;

  • 作者单位

    McMaster University (Canada).;

  • 授予单位 McMaster University (Canada).;
  • 学科 Engineering Electronics and Electrical.;Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2006
  • 页码 179 p.
  • 总页数 179
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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