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Electronic structure calculation of single and coupled self-assembled quantum dots.

机译:单个和耦合的自组装量子点的电子结构计算。

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摘要

There are two main contributions of this thesis.; First, from the theoretical point of view, we find that different treatments of the nanostructure-barrier interface in the framework of multiband effective-mass theory, result in the existence of non-physical solutions for the hole energy levels of a nanostructure. Our proposed improvement is an approach based on the envelope-function theory for nanostructures developed by Burt and Foreman. In structures with a large difference of the structural parameters between the constituent materials, such as InAs/GaAs quantum nanostructures, the conventional multiband models lead to non-physical solutions.; Second, we investigate underlying physics of the theoretically less investigated QD systems. Variation of electronic and optical properties of InAs/GaAs QDs and QDM grown on [11k] substrates, where k=1,2,3 were analyzed and we found that: (i) The QD size in the growth direction determines the degree of influence of the substrate orientation: the flatter the dots, the larger the difference from the reference [001] case. (ii) The small variation of inter-dot distance in eight QD molecule qualitatively changes the transition energy dependence on the substrate orientation. (iii) Size of the QD in the growth direction determines the influence of the (In,Ga)As capping layer on the optical properties of [11k] grown InAs QDs, where k=1,2,3. Next, two cases of type II QDs where hole is localized outside the dot, were discussed: InP/InGaP QDs and QDMs in an external magnetic field, and InAs QDs capped with Ga(As,Sb). Competition between confinement, quantum mechanical coupling, and strain influence the exciton diamagnetic shift in single QD and double and triple QDM is investigated in details. Available experimental data were successfully described by one of the optically active exciton states of the lowest lying exciton quartet. Finally, the electronic and optical properties of unstrained GaAs self-assembled QDs with precisely known sizes and shape, placed in an external magnetic field are investigated. For magnetic fields applied both, in growth direction and perpendicular to it (B≤50T), we found good agreement between our predicted exciton diamagnetic shift and recent experimental magneto-photoluminescence data.
机译:本论文有两个主要贡献。首先,从理论的角度来看,我们发现在多带有效质量理论的框架内对纳米结构-势垒界面的不同处理导致了纳米结构空穴能级的非物理解的存在。我们提出的改进是一种基于包络函数理论的Burt和Foreman开发的纳米结构的方法。在组成材料之间的结构参数差异很大的结构中,例如InAs / GaAs量子纳米结构,传统的多频带模型导致非物理解。其次,我们研究理论上研究较少的QD系统的基础物理学。分析了在[11k]衬底上生长的InAs / GaAs QD和QDM的电子和光学特性的变化,其中k = 1,2,3,我们发现:(i)生长方向上的QD大小决定了影响程度基板方向的角度:点越平坦,与参考文献[001]的差异越大。 (ii)八个QD分子中点间距离的微小变化定性地改变了过渡能量对衬底取向的依赖性。 (iii)QD在生长方向上的大小决定了(In,Ga)As覆盖层对[11k]生长的InAs QD的光学性能的影响,其中k = 1,2,3。接下来,讨论了两种将空穴定位在点外的II型QD的情况:InP / InGaP QD和外部磁场中的QDM,以及盖有Ga(As,Sb)的InAs QD。限制,量子力学耦合和应变之间的竞争会影响单量子点以及双量子和三重量子点中激子的反磁位移。可用的实验数据已由最低位准激子四重态的旋光激子态之一成功描述。最后,研究了放置在外部磁场中的具有精确已知尺寸和形状的无应变GaAs自组装QD的电子和光学特性。对于在生长方向和垂直方向(B≤50T)均施加的磁场,我们发现我们预测的激子抗磁位移与最近的实验磁光致发光数据之间具有良好的一致性。

著录项

  • 作者

    Mlinar, Vladan.;

  • 作者单位

    Universiteit Antwerpen (Belgium).;

  • 授予单位 Universiteit Antwerpen (Belgium).;
  • 学科 Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 2007
  • 页码 190 p.
  • 总页数 190
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 O49;
  • 关键词

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