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An XAS investigation of the structure of silica-supported titanium, vanadium and gallium complexes.

机译:XAS研究二氧化硅负载的钛,钒和镓配合物的结构。

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摘要

This thesis is divided into 3 main sections. The first section examines the structure of the surface sites formed in the reaction of VOCl3 with the surface of Aerosil and Sylopol silicas. Each silica was dehydroxylated at two different temperatures. Vanadium K-edge XANES and EXAFS reveals that the sites have a uniform first coordination sphere regardless of the hydroxyl content. EXAFS curve-fitting confirmed that the sites are ≡SiOVOCl 2, but revealed an unexpected asymmetry in the V-Cl bond distances, which is suggested to be a manifestation of silicon-chloride interactions. The analogous reaction was performed with VO(OiPr)3 affording ≡SiOVO(OiPr)2. The EXAFS suggested a similar asymmetry of 2-propoxy ligands.; The second section describes the reaction of TiCl4 with Aerosil silica, dehydroxylated at two pretreatment temperatures. Metals analysis of the material show an initial 1:1 Ti:OH for each silica pretreatment temperature. The product of the reaction of TiCl4 with silica pretreated at low temperature (100°C) is unstable under dynamic vacuum. Cryogenic XANES and EXAFS show that the 5-coordinate [Cl3Ti(mu-OSi≡) 2] site, which is initially formed, transforms to a dipodal Cl 2Ti(OSi≡)2 species by heating or extended evacuation. Information confirming the dimeric titanium site is present only in EXAFS recorded at low temperature due to the lack of thermal motion. The site formed on silica pretreated at 500°C, ≡SiTiOCl3 does not evolve.; The final section explores the structure of sites formed when GaMe 3 reacts with the surface of a nonporous Aerosil silica pretreated at 100 or 500°C. Elemental and gas-phase analysis, in situ IR and solid-state NMR, reveal a uniform surface site with the empirical formula ≡SiOGaMe 2. Most of the grafting (85%) occurs on hydroxyls, but a small amount (15%) of siloxane (O3SiO-SiO3) bond cleavage is also observed. The Ga K-edge EXAFS of GaMe3-modified silica, recorded at 10 K, reveals that each Ga has a Ga neighbor at 2.97-2.99 A. Features apparent for the positive identification of a dinuclear site are enhanced with cryogenic EXAFS collection.{09}The EXAFS of two model complexes, which also provide dinuclear gallium sites, are presented. In all cases, gallium sites are bridged through siloxide ligands suggesting that silica hydroxyls are always predominately adjacent.
机译:本文分为三个主要部分。第一部分检查了VOCl3与Aerosil和Sylopol二氧化硅表面的反应中形成的表面部位的结构。每种二氧化硅在两个不同的温度下脱羟基。钒K边缘XANES和EXAFS显示,无论羟基含量如何,这些位点均具有均匀的第一配位球。 EXAFS曲线拟合证实该位点为≡SiOVOCl2,但在V-Cl键距中显示出意想不到的不对称性,这被认为是氯化硅相互作用的一种表现。用VO(OiPr)3进行类似反应,得到≡SiOVO(OiPr)2。 EXAFS表明2-丙氧基配体具有相似的不对称性。第二部分描述了TiCl4与Aerosil二氧化硅在两个预处理温度下脱羟基的反应。材料的金属分析显示,每个二氧化硅预处理温度的初始Ti:OH为1:1。 TiCl4与在低温(100°C)下预处理的二氧化硅的反应产物在动态真空下不稳定。低温XANES和EXAFS表明,最初形成的5坐标[Cl3Ti(mu-OSi≡)2]位点通过加热或长时间抽空转变为二足体Cl 2Ti(OSi≡)2物种。由于缺乏热运动,仅在低温下记录的EXAFS中存在确认二聚体钛位点的信息。在500°C预处理的二氧化硅上形成的部位≡SiTiOCl3不会放出。最后一部分探讨了当GaMe 3与在100或500°C预处理的无孔Aerosil二氧化硅表面反应时形成的位点结构。元素和气相分析(原位红外光谱和固态NMR)均显示经验公式为≡SiOGaMe2的表面均匀。大部分接枝(85%)发生在羟基上,而少量(15%)发生在羟基上。还观察到硅氧烷(O3SiO-SiO3)键断裂。在10 K下记录的GaMe3改性二氧化硅的Ga K边缘EXAFS显示,每个Ga在2.97-2.99 A处都有一个Ga邻域。低温EXAFS收集增强了对双核位点进行阳性识别的明显特征。{09 }介绍了两种模型配合物的EXAFS,它们也提供了双核镓位点。在所有情况下,镓位点都通过硅氧化物配体桥接,这表明二氧​​化硅羟基始终主要相邻。

著录项

  • 作者

    Deguns, Eric Walter.;

  • 作者单位

    University of California, Santa Barbara.;

  • 授予单位 University of California, Santa Barbara.;
  • 学科 Chemistry Inorganic.
  • 学位 Ph.D.
  • 年度 2006
  • 页码 267 p.
  • 总页数 267
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无机化学;
  • 关键词

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