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Time-resolved X-ray imaging of magnetization dynamics in Spin Transfer Torque devices.

机译:自旋传递扭矩设备中磁化动力学的时间分辨X射线成像。

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摘要

Study of spin-dependent transport phenomena in ferromagnetic metals has gained a lot of interest amongst both theoretical and experimental physicists in the last two decades. In addition to being a rich field of study in terms of basic research, these studies have led to some very important technological applications. Discovery of the Giant Magneto Resistance (GMR) effect in 1988--89 revolutionized the read head technology for hard drives, thus making very high storage densities possible. The proposal and the subsequent experimental conformation of the existence of Spin Transfer Torque (STT) effect in ferromagnetic multi-layers promises to be a good candidate for developing high density, non-volatile, magnetic random access memory (MRAM) and tunable DC driven microwave oscillators. The subject matter of study in this thesis is investigation of the magnetization switching mechanism in STT devices.;Most of the experimental advances in the study of STT phenomena have been made via measurements of various electrical transport properties. The primary contribution of the work being presented in this thesis is an introduction of a complementary technique to study STT phenomena, viz., X-ray imaging based time resolved study of magnetization dynamics. The possibility of imaging in the sub-100 nm regime, combined with 100 ps time resolution provides a unique way to study the magnetization dynamics in STT devices.;We have performed pump-probe experiments by using the Scanning Transmission X-ray Microscope (STXM) at the Advanced Light Source (ALS) in Berkeley. Our experiments have revealed for the first time, the details of magnetization switching dynamics under the influence of STT. For our samples, we have identified two types of switching that primarily occur, viz., vortex-driven switching (VDS) and switching by C-state flip-over (CSF). Both these switching mechanisms can be described in a generic way in terms of the motion of magnetic vortex cores. In the last part of this work, we have developed a simple phenomenological model to consistently explain the switching trends observed in experiments. An expression for the critical sample size has been derived and its predictions match reasonably well with experimental results obtained so far. The model also gives another prediction for temperature dependence of the switching behavior, which can be tested by future experiments.
机译:在过去的二十年中,研究铁磁金属中自旋相关的输运现象引起了理论物理学家和实验物理学家的极大兴趣。除了在基础研究方面有丰富的研究领域外,这些研究还导致了一些非常重要的技术应用。 1988年-89年发现了巨磁阻(GMR)效应,彻底改变了硬盘驱动器的读取头技术,因此可以实现很高的存储密度。铁磁性多层中自旋转移转矩(STT)效应的存在的提议和随后的实验构象有望成为开发高密度,非易失性,磁性随机存取存储器(MRAM)和可调谐直流驱动微波的良好候选者振荡器。本文的研究主题是对STT器件中的磁化转换机制的研究。; STT现象研究的大部分实验进展都是通过测量各种电传输特性而取得的。本文提出的工作的主要贡献是介绍了一种补充技术来研究STT现象,即基于X射线成像的时间分辨磁化动力学研究。在亚100 nm范围内成像的可能性以及100 ps的时间分辨率提供了一种独特的方法来研究STT设备中的磁化动力学。我们已经使用扫描透射X射线显微镜(STXM)进行了泵浦探针实验)在伯克利的高级光源(ALS)中。我们的实验首次揭示了STT影响下磁化开关动力学的细节。对于我们的样本,我们已经确定了两种主要发生的开关类型,即涡流驱动开关(VDS)和C状态翻转开关(CSF)。这两种切换机制都可以按照磁涡流芯的运动以通用方式描述。在这项工作的最后一部分,我们开发了一个简单的现象学模型来一致地解释在实验中观察到的转换趋势。得出了临界样品量的表达式,其预测与到目前为止获得的实验结果相当吻合。该模型还为开关行为的温度依赖性提供了另一种预测,可以通过将来的实验进行测试。

著录项

  • 作者

    Chembrolu, Venkatesh.;

  • 作者单位

    Stanford University.;

  • 授予单位 Stanford University.;
  • 学科 Physics Electricity and Magnetism.
  • 学位 Ph.D.
  • 年度 2008
  • 页码 135 p.
  • 总页数 135
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 电磁学、电动力学;
  • 关键词

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