TWO-PORT NOISE CHARACTERISATION BASED ON DOUBLE-SIDEBAND NOISE POWER MEASUREMENTS

摘要

A new model for the source-pull noise characterisation of two-ports based on double-sideband output noise power measurements is introduced. The model accounts for uneven noise contribution from each sideband due to frequency variation of both the gain and the source reflection coefficient. It is dedicated for low-cost on-wafer noise measurement systems utilising an impedance tuner with a long interconnecting cable to the device tested.