High Quality Epitaxial Germanium on Si (110) using Liquid Phase Crystallization for Low—Cost III-V Solar-Cells

摘要

Germanium integration on silicon is required for fabricating high efficiency III-V low-cost solar cells on silicon. In this work, we present a single step thermal annealing of amorphous germanium films as a method of monolithic integration of epitaxial germanium on crystalline silicon (110) wafers. The re-crystallization progresses via liquid phase epitaxy by heating the germanium layer in inert ambient to right above its melting temperature of 937