High-power visible semiconductor lasers

摘要

Abstract: High power visible semiconductor laser diodes are reported at wavelengths ranging from 620 nm to 690 nm. Broad area laser diodes exhibit peak cw output powers of 3.8 W from a 250 $mu@m aperture at 688 nm and $GRT 1 W cw at 636 nm from a 100 $mu@m aperture. Monolithic 1 cm arrays with a 24% filling factor provide output powers of 30 W cw at 687 nm. Single mode lasers in the 620 nm wavelength band emit $GRT 50 mW and operate at temperatures up to 80$DGR@C. !4