首页> 外文会议>The Twelfth International Conference on Ultrafast Phenomena, Jul 9-13, 2000, Charleston, South Carolina >Spectral Sensitization, Supersensitization and Ultrafast Exciton Trapping on AgBr Semiconductor Surface
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Spectral Sensitization, Supersensitization and Ultrafast Exciton Trapping on AgBr Semiconductor Surface

机译:AgBr半导体表面的光谱敏化,超敏化和超快激子俘获

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摘要

The fast electron photo-injection rate from the adsorbed dye to AgBr was found to be dependent on the type of AgBr surface, size of grains, and pAg of emulsion. Ultrafast exciton trapping is discussed in terms of dimensionality of J-aggregates.
机译:发现从吸附的染料到AgBr的快速电子光注入速率取决于AgBr表面的类型,晶粒尺寸和乳液的pAg。根据J聚集体的维数讨论了超快激子俘获。

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