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Bonding Environments in a Creep-Resistant Mg-RE-Zn Alloy

机译:耐蠕变Mg-RE-Zn合金中的键合环境

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Density functional theory (DFT) based first principle calculations was used to examine the effect of transitional element Zn addition on the bonding environment of Mg-Gd solid solutions. Our calculations reveal that Zn strongly interacts with Gd, while simultaneously disperses the p-orbital valence electron density of Zn along the [0001]_(Mg) and 〈1120〉_(Mg) directions of hcp-Mg lattice. These results suggest that Zn addition stiffens the Mg-Mg bonds between the {0002}_(Mg)-basal planes, and along 〈1120〉_(Mg). The enhanced bonding between the Mg basal planes may potentially drives basal precipitation in Mg-Gd-Zn alloys seen in experiments. On the other hand, bond stiffening along 〈1120〉_(Mg) noticeably increased the vacancy migration barrier for basal plane diffusion in Mg. This increase has bearing on the high temperature creep properties, because vacancy diffusion is a dominant creep deformation mechanism at operation temperatures of 150-300 ℃ for Mg-alloy parts. Thus, our calculations predict that Zn addition to Mg-Gd alloy will strongly influence its microstructure and creep response.
机译:基于密度泛函理论(DFT)的第一原理计算用于检验过渡元素锌添加对Mg-Gd固溶体键合环境的影响。我们的计算表明,Zn与Gd强烈相互作用,同时沿hcp-Mg晶格的[0001] _(Mg)和<1120> _(Mg)方向分散Zn的p轨道价电子密度。这些结果表明,Zn的添加使{0002} _(Mg)-基面之间和沿<1120> _(Mg)的Mg-Mg键变硬。实验中发现,Mg基面之间增强的键合可能会驱动Mg-Gd-Zn合金中的基体沉淀。另一方面,沿〈1120〉 _(Mg)的键硬化明显增加了镁中基面扩散的空位迁移势垒。这种增加与高温蠕变性能有关,因为空位扩散是镁合金零件在150-300℃的工作温度下的主要蠕变变形机制。因此,我们的计算预测,向Mg-Gd合金中添加Zn将强烈影响其微观结构和蠕变响应。

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