High Retention-Time Nonvolatile Amorphous Silicon TFT Memory For Static Active Matrix OLED Display Without Pixel Refresh

摘要

Amorphous Silicon (a-Si) thin film transistors (TFTs) based memory devices have the potential to greatly expand the functionality of the a-Si TFT circuitry. They provide a low-cost and efficient way to integrate memory capabilities into large area electronics. To this end, there has been a rising interest in the development of a-Si floating gate TFT memory (FG-TFT) (1, 2). However, these initial demonstrations suffer from two major drawbacks: (i) short retention time (1) and (ii) strong dependence of drain saturation current (Id.sat) on drain voltage (2). In this study, we will focus on these issues and propose a new device structure that mitigates the effects. Furthermore, we will demonstrate the integration of this device into a novel AMOLED pixel, which allows the display to function without pixel refresh.