Method for in-situ reliability testing of TIM samples

摘要

In this paper a possible method demonstrated for in-situ reliability testing of various TIM materials. The method is based on thermal transient measurements of a power semiconductor device in a TO-type package which has a flat, external cooling surface. By powering the junction of the semiconductor cyclically the whole assembly is exposed to intense thermal cycles in which the main heat-flow path leads through the TIM material. May the quality of the TIM change during the cycles the maximum