Research of Semiconductor Bridge Plasma with Optical Technique

摘要

Semiconductor Bridge (SCB) plasma was used as igniter of energetic materials and the characteristics of plasma were vital to understand the ignition mechanism. However, owing to little size and short duration, the research of SCB plasma was restricted. With optical method the component, radiation intensity, size and speed of SCB plasma were studied in this paper. The atomic emission spectra indicated that SCB plasma was comprised of aluminum and iron, copper, silicon atom and also copper and silicon ion. The radiation intensity increased greatly and reached the highest at the moment of 3 μs. Plasma radial and axial size were about 500–2 000 μm and then plasma speed were then induced. At the moment of 1 μs, the plasma speed in radial direction was about 1 km/s and speed in axial direction 0.7 km/s and reduced the minim at 5 μs. The results provided instruction for the SCB plasma chemical reaction analysis, bridge design and charge condition. Also, the analytical technique was suitable for other transient and small-size plasma system.