首页> 外文会议>Synthesis, characterization, and applications of functional materials - thin films and nanostructures >Electronic structures and optical properties of cuprous oxide and hydroxide
【24h】

Electronic structures and optical properties of cuprous oxide and hydroxide

机译:氧化亚铜和氢氧化亚铜的电子结构和光学性质

获取原文
获取原文并翻译 | 示例

摘要

The broad range of applications of copper, including areas such as electronics, fuel cells, and spent nuclear fuel disposal, require accurate description of the physical and chemical properties of copper compounds. Within some of these applications, cuprous hydroxide is a compound whose relevance has been recently discovered. Its existence in the solid-state form was recently reported. Experimental determination of its physical-chemical properties is challenging due to its instability and poop crystallinity. Within the framework of density functional theory calculations (DFT), we investigated the nature of bonding, electronic spectra, and optical properties of the cuprous oxide and cuprous hydroxide. It is found that the hybrid functional PBEO can accurately describe the electronic structure and optical properties of these two copper(I) compounds. The calculated properties of cuprous oxide are in good agreement with the experimental data and other theoretical results. The structure of cuprous hydroxide can be deduced from that of cuprous oxide by substituting half Cu~+ in Cu_2O lattice with protons. Compared to Cu_2O, the presence of hydrogen in CuOH has little effect on the ionic nature of Cu-O bonding, but lowers the energy levels of the occupied states. Thus, CuOH is calculated to have a wider indirect band gap of 2.73 eV compared with the Cu_2O band gap of 2.17 eV.
机译:铜的广泛应用,包括电子,燃料电池和废核燃料处理等领域,都需要准确描述铜化合物的物理和化学性质。在其中一些应用中,氢氧化亚铜是最近发现其相关性的化合物。最近报道了其以固态形式存在。由于其不稳定性和粪便结晶度,对其物理化学性质进行实验确定具有挑战性。在密度泛函理论计算(DFT)的框架内,我们研究了氧化亚铜和氢氧化亚铜的键合性质,电子光谱以及光学性质。发现杂化功能性PBEO可以准确描述这两种铜(I)化合物的电子结构和光学性质。氧化亚铜的计算特性与实验数据和其他理论结果吻合良好。通过用质子取代Cu_2O晶格中的一半Cu〜+,可以从氧化亚铜中推导出氢氧化亚铜的结构。与Cu_2O相比,CuOH中氢的存在对Cu-O键合的离子性质影响很小,但会降低占据态的能级。因此,计算得出的CuOH的间接带隙为2.73 eV,而Cu_2O的带隙为2.17 eV。

著录项

  • 来源
  • 会议地点 San Francisco CA(US)
  • 作者单位

    Division of Materials technology Department of Materials and Engineering, Royal Institute of Technology (KTH), SE-100 44 Stockholm, Sweden;

    Division of Materials technology Department of Materials and Engineering, Royal Institute of Technology (KTH), SE-100 44 Stockholm, Sweden;

    Division of Materials technology Department of Materials and Engineering, Royal Institute of Technology (KTH), SE-100 44 Stockholm, Sweden;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-26 14:10:39

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号