首页> 外文会议>Symposium on Thermoelectric Materials 2003: Research and Applications; 20031201-20031203; Boston,MA; US >Thickness Dependences of the Thermoelectric Properties in (001)KCl/PbTe/SnTe/PbTe Heterostructures
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Thickness Dependences of the Thermoelectric Properties in (001)KCl/PbTe/SnTe/PbTe Heterostructures

机译:(001)KCl / PbTe / SnTe / PbTe异质结构中热电性能的厚度依赖性

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摘要

The dependences of the thermoelectric properties of (001 )KCl/PbTe/SnTe/PbTe three-layer structures on the SnTe layer thickness (d_(SnTe) = 0.5 - 6.0 nm) at a fixed thickness of PbTe layers were studied. It was established that the thickness dependences of the Seebeck coefficient, the Hall coefficient, electrical conductivity, charge carrier mobility, and the thermoelectric power factor are distinctly non-monotonic. Two possible reasons for this non-monotonic behavior of the thickness dependences of the thermoelectric properties are considered: the size quantization of the energy spectrum in a SnTe quantum well and / or the formation of edge misfit dislocations at the interfaces after reaching the critical thickness, which corresponds to the transition from a pseudomorphic growth to the introduction of misfit dislocations at the interfaces. It is suggested that the observed effect has a general character and should be taken into account when optimizing thermoelectric properties of superlattices.
机译:研究了(001)KCl / PbTe / SnTe / PbTe三层结构在固定厚度的PbTe层上的热电性能对SnTe层厚度(d_(SnTe)= 0.5-6.0 nm)的依赖性。已经确定,塞贝克系数,霍尔系数,电导率,电荷载流子迁移率和热电功率因数的厚度依赖性显然是非单调的。考虑到热电特性的厚度依赖性的这种非单调性行为的两个可能原因:SnTe量子阱中能谱的尺寸量化和/或达到临界厚度后在界面处形成边缘失配位错;这对应于从拟晶生长到界面处错配位错的引入的转变。建议观察到的效果具有一般性,在优化超晶格的热电性能时应予以考虑。

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